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IXTH1N200P3
Product Overview
- Category: Power MOSFET
- Use: Switching applications in power supplies, motor control, and other high current applications
- Characteristics: High voltage capability, low on-resistance, fast switching speed
- Package: TO-247
- Essence: Efficient power switching
- Packaging/Quantity: Available in reels of 50 units
Specifications
- Voltage Rating: 200V
- Current Rating: 30A
- On-Resistance: 0.08 ohms
- Gate Threshold Voltage: 2.5V
- Maximum Power Dissipation: 300W
Detailed Pin Configuration
The IXTH1N200P3 features a standard TO-247 pin configuration with three pins: gate (G), drain (D), and source (S).
Functional Features
- High voltage capability allows for use in various power applications
- Low on-resistance minimizes power loss and heat generation
- Fast switching speed enables efficient power control
Advantages and Disadvantages
- Advantages:
- High voltage capability
- Low on-resistance
- Fast switching speed
- Disadvantages:
- Higher cost compared to lower voltage MOSFETs
- Larger physical size due to higher voltage rating
Working Principles
The IXTH1N200P3 operates based on the principles of field-effect transistors, utilizing its high voltage capability and low on-resistance to efficiently control power flow in various applications.
Detailed Application Field Plans
- Power Supplies: Utilized in high-voltage power supply designs for industrial equipment
- Motor Control: Enables efficient motor control in electric vehicles and industrial machinery
- High Current Applications: Used in welding equipment and high-power LED lighting systems
Detailed and Complete Alternative Models
- IXTH30N60B: Similar high-voltage MOSFET with slightly different specifications
- IRFP4668PBF: Alternative power MOSFET with comparable characteristics
This comprehensive entry provides an in-depth understanding of the IXTH1N200P3, covering its product details, specifications, functional features, application plans, and alternative models, making it a valuable resource for engineers and professionals in the field.
Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von IXTH1N200P3 in technischen Lösungen auf
What is IXTH1N200P3?
- IXTH1N200P3 is a high voltage power MOSFET designed for various technical solutions requiring efficient power management.
What is the maximum voltage rating of IXTH1N200P3?
- The maximum voltage rating of IXTH1N200P3 is 200V, making it suitable for high voltage applications.
What is the maximum current rating of IXTH1N200P3?
- The maximum continuous drain current rating of IXTH1N200P3 is typically 1A, allowing it to handle moderate power loads.
What are the typical applications of IXTH1N200P3?
- IXTH1N200P3 is commonly used in applications such as power supplies, motor control, and lighting systems due to its high voltage capability.
What is the on-state resistance of IXTH1N200P3?
- The on-state resistance (RDS(on)) of IXTH1N200P3 is typically low, enabling efficient power transfer and minimal power loss.
Does IXTH1N200P3 require a heat sink for operation?
- Depending on the specific application and power dissipation, a heat sink may be required to ensure optimal thermal performance of IXTH1N200P3.
Is IXTH1N200P3 suitable for switching applications?
- Yes, IXTH1N200P3 is designed for fast switching operations, making it suitable for applications that require rapid power control.
What are the recommended operating conditions for IXTH1N200P3?
- The recommended operating temperature range for IXTH1N200P3 is typically -55°C to 150°C, with appropriate derating for higher temperatures.
Does IXTH1N200P3 have built-in protection features?
- IXTH1N200P3 may include built-in protection against overcurrent, overvoltage, and thermal issues, but external circuitry may be required for comprehensive protection.
Where can I find detailed specifications and application notes for IXTH1N200P3?
- Detailed specifications, application notes, and technical resources for IXTH1N200P3 can be found on the manufacturer's website or datasheet.