IXFT18N100Q3

Product Overview

Category: Power MOSFET
Use: High power switching applications
Characteristics: High voltage, high current capability, low on-resistance
Package: TO-268
Essence: Efficient power management
Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications

Voltage Rating: 1000V
Current Rating: 18A
On-Resistance: 0.25Ω
Gate Threshold Voltage: 4V
Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IXFT18N100Q3 features a standard TO-268 pin configuration with three pins: gate, drain, and source.

Functional Features

High voltage capability
Low on-resistance
Fast switching speed
Low gate charge
Avalanche energy specified

Advantages and Disadvantages

Advantages: - Suitable for high power applications - Low conduction losses - Enhanced ruggedness and reliability

Disadvantages: - Higher cost compared to lower voltage MOSFETs - Gate drive requirements may be more demanding

Working Principles

The IXFT18N100Q3 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.

Detailed Application Field Plans

This MOSFET is ideal for use in high power applications such as: - Switched-mode power supplies - Motor drives - Inverters - Solar inverters - Welding equipment

Detailed and Complete Alternative Models

IXFN38N100Q3
IXFH24N100Q3
IXFK44N100Q3
IXFM34N100Q3

In conclusion, the IXFT18N100Q3 is a high-voltage power MOSFET designed for efficient power management in various high-power switching applications. Its characteristics, specifications, and functional features make it suitable for demanding industrial and commercial applications.

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Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von IXFT18N100Q3 in technischen Lösungen auf

What is IXFT18N100Q3?
- IXFT18N100Q3 is a high-performance, low-loss 1000V IGBT (Insulated Gate Bipolar Transistor) designed for various power electronic applications.
What are the key features of IXFT18N100Q3?
- The key features include a low VCE(sat), fast switching speed, and high current capability, making it suitable for high-frequency and high-power applications.
In what technical solutions can IXFT18N100Q3 be used?
- IXFT18N100Q3 can be used in applications such as motor drives, renewable energy systems, welding equipment, and industrial power supplies.
What is the maximum voltage rating of IXFT18N100Q3?
- The maximum voltage rating of IXFT18N100Q3 is 1000V, making it suitable for high-voltage applications.
What is the typical switching frequency for IXFT18N100Q3?
- The typical switching frequency for IXFT18N100Q3 is in the range of several kHz to MHz, depending on the specific application requirements.
Does IXFT18N100Q3 require any external protection circuitry?
- IXFT18N100Q3 may require external protection circuitry such as snubber circuits or freewheeling diodes to ensure reliable and safe operation in certain applications.
What are the thermal considerations for IXFT18N100Q3?
- Proper thermal management is essential for IXFT18N100Q3, and it may require heatsinking or other cooling methods to maintain optimal operating temperatures.
Can IXFT18N100Q3 be paralleled for higher current applications?
- Yes, IXFT18N100Q3 can be paralleled to increase the current-handling capability in high-power applications.
What are the recommended gate drive requirements for IXFT18N100Q3?
- The recommended gate drive requirements include proper gate voltage and gate resistance to ensure efficient and reliable switching performance.
Are there any application notes or reference designs available for IXFT18N100Q3?
- Yes, IXYS, the manufacturer of IXFT18N100Q3, provides application notes and reference designs to assist engineers in implementing the device effectively in various technical solutions.