Kaufen Toshiba Semiconductor and Storage TK4A60DB(STA4,Q,M) MOSFET N-CH 600V 3.7A TO-220SIS - YYIC

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TK4A60DB(STA4,Q,M)

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TK4A60DB(STA4,Q,M)

MOSFET N-CH 600V 3.7A TO-220SIS

Artikelnummer

TK4A60DB(STA4,Q,M)

Hersteller/Marke

Toshiba Semiconductor and Storage

Serie

π-MOSVII

Teilestatus

Active

Verpackung

Tube

Technologie

MOSFET (Metal Oxide)

Betriebstemperatur

150°C (TJ)

Befestigungsart

Through Hole

Paket/Koffer

TO-220-3 Full Pack

Gerätepaket des Lieferanten

TO-220SIS

Verlustleistung (max.)

35W (Tc)

FET-Typ

N-Channel

FET-Funktion

-

Drain-Source-Spannung (Vdss)

600V

Strom – Dauerentladung (Id) bei 25 °C

3.7A (Ta)

Rds On (Max) @ Id, Vgs

2 Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id

4.4V @ 1mA

Gate-Ladung (Qg) (Max) @ Vgs

11nC @ 10V

Eingangskapazität (Ciss) (Max) bei Vds

540pF @ 25V

Antriebsspannung (Max. Rds Ein, Min. Rds Ein)

10V

Vgs (Max)

±30V

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