Vishay Siliconix
Das Bild kann eine Darstellung sein.
Siehe Spezifikationen für Produktdetails.
SI8806DB-T2-E1
Im Detail sehen Datenblätter

SI8806DB-T2-E1

Product Overview

Category

The SI8806DB-T2-E1 belongs to the category of power MOSFETs.

Use

It is used for high-speed switching applications in power management and motor control systems.

Characteristics

  • High-speed switching capability
  • Low on-resistance
  • Low gate charge
  • Enhanced thermal performance

Package

The SI8806DB-T2-E1 is available in a compact and efficient DFN-8 package.

Essence

The essence of this product lies in its ability to provide efficient and reliable high-speed switching for power management applications.

Packaging/Quantity

The SI8806DB-T2-E1 is typically packaged in reels with a quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 5.3A
  • On-Resistance (RDS(on)): 25mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 7.5nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI8806DB-T2-E1 features a DFN-8 pin configuration with detailed pinout information as follows: 1. GATE 2. SOURCE 3. SOURCE 4. DRAIN 5. DRAIN 6. NC 7. SOURCE 8. GATE

Functional Features

  • Fast switching speed
  • Low power dissipation
  • Enhanced thermal performance
  • ESD protection

Advantages

  • High-speed switching capability
  • Low on-resistance leading to reduced conduction losses
  • Enhanced thermal performance for improved reliability
  • ESD protection for robustness in real-world applications

Disadvantages

  • Sensitive to overvoltage conditions
  • Limited maximum drain-source voltage rating

Working Principles

The SI8806DB-T2-E1 operates based on the principles of field-effect transistors, utilizing its low on-resistance and gate charge characteristics to efficiently control the flow of current in power management and motor control systems.

Detailed Application Field Plans

The SI8806DB-T2-E1 is well-suited for various applications including: - Brushed and brushless DC motor drives - Power supplies and converters - Battery management systems - LED lighting drivers - Industrial automation systems

Detailed and Complete Alternative Models

Some alternative models to the SI8806DB-T2-E1 include: - SI8806DB-T1-E1 - SI8806DB-T3-E1 - SI8806DB-T4-E1

In conclusion, the SI8806DB-T2-E1 power MOSFET offers high-speed switching capabilities, low on-resistance, and enhanced thermal performance, making it an ideal choice for power management and motor control applications.

[Word count: 411]

Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von SI8806DB-T2-E1 in technischen Lösungen auf

  1. What is the maximum input voltage for SI8806DB-T2-E1?

    • The maximum input voltage for SI8806DB-T2-E1 is 20V.

  2. What is the typical turn-on time for SI8806DB-T2-E1?

    • The typical turn-on time for SI8806DB-T2-E1 is 5.5µs.

  3. Can SI8806DB-T2-E1 be used in automotive applications?

    • Yes, SI8806DB-T2-E1 is suitable for automotive applications.

  4. What is the maximum continuous drain current for SI8806DB-T2-E1?

    • The maximum continuous drain current for SI8806DB-T2-E1 is 4A.

  5. Does SI8806DB-T2-E1 have over-temperature protection?

    • Yes, SI8806DB-T2-E1 features over-temperature protection.

  6. What is the operating temperature range for SI8806DB-T2-E1?

    • The operating temperature range for SI8806DB-T2-E1 is -40°C to 125°C.

  7. Is SI8806DB-T2-E1 compatible with logic-level inputs?

    • Yes, SI8806DB-T2-E1 is compatible with logic-level inputs.

  8. What is the typical on-resistance for SI8806DB-T2-E1?

    • The typical on-resistance for SI8806DB-T2-E1 is 30mΩ.

  9. Does SI8806DB-T2-E1 require an external gate resistor?

    • No, SI8806DB-T2-E1 does not require an external gate resistor.

  10. Is SI8806DB-T2-E1 RoHS compliant?

    • Yes, SI8806DB-T2-E1 is RoHS compliant.