SI4896DY-T1-GE3

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, converters, and motor control
Characteristics: High efficiency, low on-resistance, fast switching speed
Package: D-PAK (TO-252)
Essence: Power management
Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Voltage Rating: 30V
• Continuous Drain Current: 11A
• RDS(ON): 9.5mΩ
• Gate Threshold Voltage: 1.5V
• Power Dissipation: 2.5W

Detailed Pin Configuration

The SI4896DY-T1-GE3 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low on-resistance for high efficiency
• Fast switching speed for improved performance
• Suitable for a wide range of power management applications

Advantages

• High efficiency
• Low on-resistance
• Fast switching speed

Disadvantages

• Not suitable for high voltage applications
• Limited continuous drain current compared to some alternatives

Working Principles

The SI4896DY-T1-GE3 operates based on the principles of field-effect transistors, utilizing the gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is commonly used in various power management applications such as: - DC-DC converters - Motor control circuits - Power supplies

Detailed and Complete Alternative Models

1. SI4896DY-T1-E3: Similar specifications with different packaging
2. IRF4905PBF: Higher voltage rating and continuous drain current
3. NTMFS4C06N: Lower on-resistance and higher power dissipation

Note: The alternative models listed above are for reference purposes and may require additional evaluation based on specific application requirements.

This completes the English editing encyclopedia entry structure for SI4896DY-T1-GE3.