SI4896DY-T1-E3

Product Overview

Category

The SI4896DY-T1-E3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications such as voltage regulation and power switching.

Characteristics

• High power handling capability
• Low on-resistance
• Fast switching speed
• Low gate drive requirements

Package

The SI4896DY-T1-E3 is typically available in a surface-mount DPAK (TO-252) package.

Essence

The essence of this product lies in its ability to efficiently control and manage power in various electronic circuits.

Packaging/Quantity

It is usually packaged in reels with a quantity of 2500 units per reel.

Specifications

• Voltage Rating: 30V
• Continuous Drain Current: 11A
• RDS(ON): 0.018 Ohm
• Gate-Source Voltage (Max): ±20V
• Package Type: DPAK (TO-252)

Detailed Pin Configuration

The SI4896DY-T1-E3 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low on-resistance for minimal power dissipation
• Fast switching speed for efficient power management
• High current handling capability for robust performance

Advantages

• Efficient power management
• Low power dissipation
• Robust and reliable performance

Disadvantages

• Sensitive to static electricity
• Requires careful handling during assembly

Working Principles

The SI4896DY-T1-E3 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is widely used in various applications including: - Switching power supplies - Motor control - Battery management systems - LED lighting

Detailed and Complete Alternative Models

Some alternative models to the SI4896DY-T1-E3 include: - SI4896DY-T1-GE3 - SI4896DY-T1-RE3 - SI4896DY-T1-E4

In conclusion, the SI4896DY-T1-E3 power MOSFET offers efficient power management capabilities with low on-resistance and high current handling, making it suitable for a wide range of applications in the electronics industry.

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