SI4485DY-T1-GE3

Introduction

The SI4485DY-T1-GE3 is a power MOSFET belonging to the category of discrete semiconductor products. This component is widely used in various electronic applications due to its unique characteristics and performance capabilities.

Basic Information Overview

Category: Discrete Semiconductor
Use: Power MOSFET for electronic circuits
Characteristics: High power handling, low on-resistance, fast switching speed
Package: D-PAK (TO-252)
Essence: Efficient power management
Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

Voltage Rating: 30V
Current Rating: 11A
On-Resistance: 9.5mΩ
Power Dissipation: 2.5W
Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI4485DY-T1-GE3 features a standard D-PAK package with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

Low on-resistance for minimal power loss
Fast switching speed for efficient operation
High current handling capability for diverse applications

Advantages and Disadvantages

Advantages

High power handling capacity
Low on-resistance for improved efficiency
Fast switching speed for responsive performance

Disadvantages

Sensitive to static electricity
Limited voltage rating compared to some alternatives

Working Principles

The SI4485DY-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel between the source and drain terminals.

Detailed Application Field Plans

This power MOSFET is commonly employed in various electronic applications, including: - Switching power supplies - Motor control circuits - LED lighting systems - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the SI4485DY-T1-GE3 include: - IRF4905PBF - FDD6637 - NDP6020P

In conclusion, the SI4485DY-T1-GE3 power MOSFET offers high-performance characteristics suitable for a wide range of electronic applications, making it a valuable component in modern circuit design.

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Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von SI4485DY-T1-GE3 in technischen Lösungen auf

What is the maximum voltage rating for SI4485DY-T1-GE3?
- The maximum voltage rating for SI4485DY-T1-GE3 is typically 30V.
What is the maximum current rating for SI4485DY-T1-GE3?
- The maximum continuous drain current for SI4485DY-T1-GE3 is typically around 8A.
What is the typical on-resistance for SI4485DY-T1-GE3?
- The typical on-resistance for SI4485DY-T1-GE3 is around 10mΩ.
What are the recommended operating temperature ranges for SI4485DY-T1-GE3?
- SI4485DY-T1-GE3 is typically designed to operate within the temperature range of -55°C to 150°C.
What are the key features of SI4485DY-T1-GE3?
- SI4485DY-T1-GE3 features low on-resistance, high current capability, and a wide operating temperature range.
What are the typical applications for SI4485DY-T1-GE3?
- SI4485DY-T1-GE3 is commonly used in power management, battery protection, motor control, and other industrial applications.
Does SI4485DY-T1-GE3 require any external components for operation?
- SI4485DY-T1-GE3 may require external components such as resistors, capacitors, and inductors for proper operation in certain applications.
Is SI4485DY-T1-GE3 suitable for automotive applications?
- Yes, SI4485DY-T1-GE3 is often used in automotive systems due to its robustness and reliability.
What are the package options available for SI4485DY-T1-GE3?
- SI4485DY-T1-GE3 is available in various package options such as DFN, SOIC, and PowerPAK.
Are there any specific layout or thermal considerations when using SI4485DY-T1-GE3?
- It is important to consider proper PCB layout and thermal management to ensure optimal performance and reliability when using SI4485DY-T1-GE3.