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SI4230DY-T1-GE3

SI4230DY-T1-GE3

Product Overview

Category

The SI4230DY-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

  • Low on-resistance
  • High current handling capability
  • Fast switching speed
  • Low gate drive requirements

Package

The SI4230DY-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.

Essence

This MOSFET is designed to provide efficient power management solutions with minimal power loss and high reliability.

Packaging/Quantity

It is usually packaged in reels containing 2500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 17A
  • RDS(ON) (Max) @ VGS = 10V: 5.5mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 15nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI4230DY-T1-GE3 features the following pin configuration: 1. Gate (G) 2. Source (S) 3. Drain (D)

Functional Features

  • Low on-resistance for minimal power loss
  • High current handling capability for power management applications
  • Fast switching speed for efficient operation
  • Robust construction for reliability in demanding environments

Advantages and Disadvantages

Advantages

  • Efficient power management
  • Reliable performance
  • Compact package size

Disadvantages

  • Sensitive to static discharge
  • Requires careful handling during assembly

Working Principles

The SI4230DY-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SI4230DY-T1-GE3 is well-suited for various power management applications, including: - Switching regulators - Power supplies - Motor control - LED lighting

Detailed and Complete Alternative Models

Some alternative models to the SI4230DY-T1-GE3 include: - SI4336DY-T1-GE3 - SI4410DY-T1-GE3 - SI4562DY-T1-GE3

In conclusion, the SI4230DY-T1-GE3 power MOSFET offers efficient power management capabilities with its low on-resistance, high current handling, and fast switching speed. Its compact package and reliable performance make it suitable for a wide range of power management applications.

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Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von SI4230DY-T1-GE3 in technischen Lösungen auf

  1. What is the maximum operating temperature of SI4230DY-T1-GE3?

    • The maximum operating temperature of SI4230DY-T1-GE3 is typically 150°C.
  2. What is the input voltage range for SI4230DY-T1-GE3?

    • The input voltage range for SI4230DY-T1-GE3 is typically 4.5V to 60V.
  3. What is the typical output current capability of SI4230DY-T1-GE3?

    • The typical output current capability of SI4230DY-T1-GE3 is 3A.
  4. Does SI4230DY-T1-GE3 have overcurrent protection?

    • Yes, SI4230DY-T1-GE3 features overcurrent protection to safeguard the circuit.
  5. What is the typical switching frequency of SI4230DY-T1-GE3?

    • The typical switching frequency of SI4230DY-T1-GE3 is around 300kHz.
  6. Is SI4230DY-T1-GE3 suitable for automotive applications?

    • Yes, SI4230DY-T1-GE3 is designed to meet the requirements for automotive applications.
  7. Does SI4230DY-T1-GE3 have built-in thermal shutdown protection?

    • Yes, SI4230DY-T1-GE3 includes built-in thermal shutdown protection to prevent overheating.
  8. What is the typical efficiency of SI4230DY-T1-GE3?

    • The typical efficiency of SI4230DY-T1-GE3 is around 90% under normal operating conditions.
  9. Can SI4230DY-T1-GE3 be used in industrial control systems?

    • Yes, SI4230DY-T1-GE3 is suitable for use in industrial control systems due to its robust design.
  10. Does SI4230DY-T1-GE3 require external compensation components?

    • No, SI4230DY-T1-GE3 features internal compensation and does not require external compensation components.