SI3865BDV-T1-E3

Product Overview

Category

SI3865BDV-T1-E3 belongs to the category of power MOSFETs.

Use

It is commonly used in various electronic devices and circuits for power switching applications.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge
• Enhanced thermal performance

Package

SI3865BDV-T1-E3 is available in a compact and industry-standard package, such as DFN (Dual Flat No-Lead) or TO-252.

Essence

The essence of SI3865BDV-T1-E3 lies in its ability to efficiently control and switch high power loads in electronic systems.

Packaging/Quantity

Typically, SI3865BDV-T1-E3 is packaged in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

• Drain-Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 9.6A
• On-Resistance (Rds(on)): 20mΩ
• Gate-Source Voltage (Vgs): ±20V
• Total Gate Charge (Qg): 14nC
• Threshold Voltage (Vth): 2.5V
• Power Dissipation (Pd): 2.5W
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

SI3865BDV-T1-E3 has three pins:

1. Pin 1: Drain (D)
2. Pin 2: Source (S)
3. Pin 3: Gate (G)

Functional Features

• High voltage capability allows it to handle large power loads.
• Low on-resistance minimizes power losses and improves efficiency.
• Fast switching speed enables rapid power switching transitions.
• Low gate charge reduces the drive requirements for the control circuitry.
• Enhanced thermal performance ensures reliable operation under high temperature conditions.

Advantages and Disadvantages

Advantages

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge
• Enhanced thermal performance

Disadvantages

• May require additional heat dissipation measures in high-power applications.
• Sensitive to electrostatic discharge (ESD) and requires proper handling precautions.

Working Principles

SI3865BDV-T1-E3 operates based on the principles of metal-oxide-semiconductor field-effect transistors (MOSFETs). It utilizes a gate voltage to control the flow of current between the drain and source terminals. By adjusting the gate voltage, the MOSFET can be switched on or off, allowing or blocking the current flow.

Detailed Application Field Plans

SI3865BDV-T1-E3 finds applications in various fields, including but not limited to:

1. Power supplies and converters
2. Motor control systems
3. LED lighting
4. Battery management systems
5. Industrial automation
6. Automotive electronics

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to SI3865BDV-T1-E3 are:

1. SI2301DS-T1-GE3
2. IRF3205
3. FQP30N06L
4. IRL540N
5. STP55NF06L

These models offer similar characteristics and can be used interchangeably depending on specific application requirements.

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