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SI2308DS-T1-E3
Product Overview
- Category: MOSFET Transistor
- Use: Power switching applications
- Characteristics: Low on-resistance, high-speed switching, small package size
- Package: SOT-23
- Essence: Efficient power management
- Packaging/Quantity: Tape & Reel, 3000 units per reel
Specifications
- Voltage - Drain-Source Breakdown (V(BR)DSS): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.3A
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) @ Vgs: 7.5nC @ 10V
Detailed Pin Configuration
- Pin 1: Gate
- Pin 2: Source
- Pin 3: Drain
Functional Features
- Fast switching speed
- Low gate drive power required
- Enhanced thermal performance
Advantages and Disadvantages
- Advantages:
- Low on-resistance
- Small package size
- High-speed switching
- Disadvantages:
- Limited voltage and current handling capacity
Working Principles
The SI2308DS-T1-E3 operates based on the principles of field-effect transistors, utilizing a gate voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
This MOSFET transistor is suitable for various power switching applications, including but not limited to: - DC-DC converters - Load switches - Battery management systems - Motor control
Detailed and Complete Alternative Models
- Alternative Model 1: SI2309DS-T1-E3
- Alternative Model 2: SI2310DS-T1-E3
- Alternative Model 3: SI2311DS-T1-E3
This entry provides comprehensive information about the SI2308DS-T1-E3 MOSFET transistor, covering its product overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von SI2308DS-T1-E3 in technischen Lösungen auf
Sure, here are 10 common questions and answers related to the application of SI2308DS-T1-E3 in technical solutions:
Question: What is the maximum drain-source voltage for SI2308DS-T1-E3?
Answer: The maximum drain-source voltage for SI2308DS-T1-E3 is 20V.Question: What is the continuous drain current rating for SI2308DS-T1-E3?
Answer: The continuous drain current rating for SI2308DS-T1-E3 is 4.3A.Question: What is the on-resistance for SI2308DS-T1-E3?
Answer: The on-resistance for SI2308DS-T1-E3 is typically 60mΩ at Vgs=4.5V.Question: What is the gate threshold voltage for SI2308DS-T1-E3?
Answer: The gate threshold voltage for SI2308DS-T1-E3 is typically 1.0V.Question: Can SI2308DS-T1-E3 be used in low-power applications?
Answer: Yes, SI2308DS-T1-E3 can be used in low-power applications due to its low on-resistance and low gate threshold voltage.Question: Is SI2308DS-T1-E3 suitable for battery-powered devices?
Answer: Yes, SI2308DS-T1-E3 is suitable for battery-powered devices due to its low on-resistance and low gate threshold voltage, which helps in minimizing power losses.Question: What are the typical applications for SI2308DS-T1-E3?
Answer: Typical applications for SI2308DS-T1-E3 include load switching, power management, and battery protection in portable electronics.Question: Can SI2308DS-T1-E3 be used in automotive applications?
Answer: Yes, SI2308DS-T1-E3 can be used in automotive applications where low on-resistance and high reliability are required.Question: What is the operating temperature range for SI2308DS-T1-E3?
Answer: The operating temperature range for SI2308DS-T1-E3 is -55°C to 150°C.Question: Is SI2308DS-T1-E3 RoHS compliant?
Answer: Yes, SI2308DS-T1-E3 is RoHS compliant, making it suitable for use in environmentally sensitive applications.