Vishay Siliconix
Das Bild kann eine Darstellung sein.
Siehe Spezifikationen für Produktdetails.
IRFD9110PBF
Im Detail sehen Datenblätter

IRFD9110PBF

Product Overview

Category: Semiconductor
Use: Power MOSFET
Characteristics: High voltage, low on-resistance
Package: TO-252
Essence: N-channel power MOSFET
Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

  • Voltage - Drain-Source Breakdown (Max): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) @ Vgs: 4nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 200pF @ 25V

Detailed Pin Configuration

  1. Gate (G)
  2. Drain (D)
  3. Source (S)

Functional Features

  • Low power dissipation
  • Fast switching speed
  • ESD protection
  • High input impedance

Advantages and Disadvantages

Advantages: - Low on-resistance - High voltage capability - ESD protection - Compact package size

Disadvantages: - Limited continuous drain current - Higher gate charge compared to some alternatives

Working Principles

The IRFD9110PBF operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IRFD9110PBF is suitable for various applications including: - Switching power supplies - DC-DC converters - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

  1. IRF4905PBF: Similar voltage and current ratings, different package (TO-220)
  2. IRF540NPBF: Higher voltage and current ratings, different package (TO-220)
  3. IRF3205PBF: Lower on-resistance, higher current rating, different package (TO-220)

This comprehensive entry provides a detailed overview of the IRFD9110PBF, covering its product information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von IRFD9110PBF in technischen Lösungen auf

  1. What is the IRFD9110PBF?

    • The IRFD9110PBF is a power MOSFET transistor designed for various switching applications in electronic circuits.

  2. What are the key features of the IRFD9110PBF?

    • The IRFD9110PBF features low on-resistance, fast switching speed, and high current capability, making it suitable for power management and control applications.

  3. What are the typical applications of the IRFD9110PBF?

    • Typical applications include power supplies, motor control, DC-DC converters, and other switching circuits where efficient power management is required.

  4. What is the maximum voltage and current rating of the IRFD9110PBF?

    • The IRFD9110PBF has a maximum voltage rating of 100V and a continuous drain current rating of 1.8A.

  5. How do I properly drive the IRFD9110PBF in my circuit?

    • It is important to ensure that the gate-source voltage and current are within the specified limits to avoid damaging the transistor. A proper gate driver circuit should be used to control the switching of the MOSFET.

  6. What are the thermal considerations for the IRFD9110PBF?

    • Proper heat sinking and thermal management should be implemented to ensure that the junction temperature of the IRFD9110PBF remains within safe operating limits.

  7. Can the IRFD9110PBF be used in high-frequency switching applications?

    • Yes, the fast switching speed and low on-resistance make the IRFD9110PBF suitable for high-frequency switching applications.

  8. Are there any recommended layout considerations when using the IRFD9110PBF?

    • Proper PCB layout techniques, such as minimizing trace lengths and providing adequate thermal relief, should be employed to optimize the performance and reliability of the IRFD9110PBF.

  9. What are the potential failure modes of the IRFD9110PBF?

    • Common failure modes include overvoltage stress, overcurrent conditions, and excessive junction temperature. Proper protection circuits and operating conditions should be observed to prevent these failures.

  10. Where can I find detailed technical specifications and application notes for the IRFD9110PBF?

    • Detailed technical specifications and application notes can be found in the datasheet provided by the manufacturer or on their official website. Additionally, industry resources and application guides may also provide valuable information on using the IRFD9110PBF in technical solutions.