Vishay Semiconductor Diodes Division
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BU20105S-E3/45
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BU20105S-E3/45

Product Overview

Category: Semiconductor
Use: Power MOSFET
Characteristics: High voltage, low on-resistance
Package: TO-263
Essence: Efficient power switching
Packaging/Quantity: Tape & Reel, 800 units

Specifications

  • Voltage Rating: 100V
  • Current Rating: 50A
  • On-Resistance: 8.5mΩ
  • Gate Charge: 35nC
  • Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

  1. Gate
  2. Drain
  3. Source

Functional Features

  • Low on-resistance for high efficiency
  • Fast switching speed
  • Low gate charge for reduced power loss

Advantages and Disadvantages

Advantages: - High voltage rating - Low on-resistance - Fast switching speed

Disadvantages: - Sensitive to static electricity - Higher cost compared to standard MOSFETs

Working Principles

BU20105S-E3/45 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is suitable for various applications including: - Switching power supplies - Motor control - LED lighting - Solar inverters

Detailed and Complete Alternative Models

  1. IRF540N
  2. STP55NF06L
  3. FQP50N06L

Note: The alternative models listed above are for reference purposes and may have different specifications.

This entry provides a comprehensive overview of the BU20105S-E3/45 power MOSFET, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von BU20105S-E3/45 in technischen Lösungen auf

  1. What is BU20105S-E3/45?

    • BU20105S-E3/45 is a high-speed switching diode designed for use in various technical solutions such as power supplies, inverters, and signal processing.

  2. What are the key features of BU20105S-E3/45?

    • The key features of BU20105S-E3/45 include its fast switching speed, low forward voltage drop, and high surge current capability.

  3. In what applications can BU20105S-E3/45 be used?

    • BU20105S-E3/45 can be used in applications such as freewheeling diodes, polarity protection diodes, and high-frequency rectification.

  4. What is the maximum forward voltage of BU20105S-E3/45?

    • The maximum forward voltage of BU20105S-E3/45 is typically around 1V at a forward current of 1A.

  5. What is the reverse recovery time of BU20105S-E3/45?

    • The reverse recovery time of BU20105S-E3/45 is typically in the range of nanoseconds, making it suitable for high-speed switching applications.

  6. Can BU20105S-E3/45 handle high surge currents?

    • Yes, BU20105S-E3/45 is designed to handle high surge currents, making it suitable for applications with transient overcurrent conditions.

  7. Is BU20105S-E3/45 suitable for use in high-frequency circuits?

    • Yes, BU20105S-E3/45 is suitable for use in high-frequency circuits due to its fast switching speed and low parasitic capacitance.

  8. What is the operating temperature range of BU20105S-E3/45?

    • The operating temperature range of BU20105S-E3/45 is typically from -55°C to 150°C, making it suitable for a wide range of environmental conditions.

  9. Does BU20105S-E3/45 have any specific mounting requirements?

    • BU20105S-E3/45 is typically available in surface mount packages, and proper soldering techniques should be followed for reliable performance.

  10. Where can I find detailed specifications and application notes for BU20105S-E3/45?

    • Detailed specifications and application notes for BU20105S-E3/45 can be found in the product datasheet provided by the manufacturer or distributor.