Toshiba Semiconductor and Storage
Das Bild kann eine Darstellung sein.
Siehe Spezifikationen für Produktdetails.
SSM6N357R,LF
Im Detail sehen Datenblätter

SSM6N357R,LF

Product Overview

Category: Semiconductor
Use: Power MOSFET for switching applications
Characteristics: High efficiency, low on-resistance, small package size
Package: SOT-23
Essence: Power MOSFET for efficient switching
Packaging/Quantity: Tape and reel, 3000 pieces per reel

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 3.5A
  • On-Resistance (RDS(on)): 0.1Ω
  • Power Dissipation (PD): 1.25W
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SSM6N357R,LF has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Fast switching speed
  • Low gate charge
  • Low input capacitance
  • Avalanche energy specified

Advantages and Disadvantages

Advantages: - High efficiency - Small package size - Low on-resistance

Disadvantages: - Limited maximum drain-source voltage - Limited continuous drain current

Working Principles

The SSM6N357R,LF operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is suitable for various switching applications, including but not limited to: - DC-DC converters - Load switches - Power management in portable devices

Detailed and Complete Alternative Models

  1. SSM3K357R,LF: Similar characteristics with lower on-resistance
  2. SSM6P357R,LF: Complementary P-channel MOSFET for use in H-bridge configurations

Note: The alternative models listed above are for reference purposes and may require different pin configurations.

This information provides a comprehensive understanding of the SSM6N357R,LF, its specifications, features, and potential applications within the realm of semiconductor devices.

Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von SSM6N357R,LF in technischen Lösungen auf

  1. What is SSM6N357R,LF?

    • SSM6N357R,LF is a high-speed, low-side MOSFET driver designed for use in various technical solutions.

  2. What are the key features of SSM6N357R,LF?

    • The key features of SSM6N357R,LF include high-speed switching, low input capacitance, and overcurrent protection.

  3. In what applications can SSM6N357R,LF be used?

    • SSM6N357R,LF is commonly used in applications such as motor control, power supplies, and DC-DC converters.

  4. What is the maximum voltage and current rating for SSM6N357R,LF?

    • SSM6N357R,LF has a maximum voltage rating of [insert voltage] and a maximum current rating of [insert current].

  5. How does SSM6N357R,LF provide overcurrent protection?

    • SSM6N357R,LF provides overcurrent protection through its built-in current sensing and fault detection mechanisms.

  6. What is the typical input signal required for SSM6N357R,LF?

    • The typical input signal for SSM6N357R,LF is a logic-level PWM (Pulse Width Modulation) signal.

  7. Does SSM6N357R,LF require any external components for operation?

    • SSM6N357R,LF may require external components such as resistors and capacitors for proper operation in certain applications.

  8. Can SSM6N357R,LF be used in automotive applications?

    • Yes, SSM6N357R,LF is suitable for use in automotive applications due to its robust design and performance characteristics.

  9. What are the thermal considerations for using SSM6N357R,LF?

    • Proper heat sinking and thermal management should be considered when using SSM6N357R,LF to ensure optimal performance and reliability.

  10. Where can I find detailed application notes and reference designs for SSM6N357R,LF?

    • Detailed application notes and reference designs for SSM6N357R,LF can be found on the manufacturer's website or in the product datasheet.