Rohm Semiconductor
Das Bild kann eine Darstellung sein.
Siehe Spezifikationen für Produktdetails.
BR24G128FVJ-3GTE2
Im Detail sehen Datenblätter

BR24G128FVJ-3GTE2

Product Overview

Category

BR24G128FVJ-3GTE2 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage and retrieval in various electronic devices.

Characteristics

  • Non-volatile: The BR24G128FVJ-3GTE2 retains stored data even when power is disconnected.
  • High capacity: It offers a storage capacity of 128 kilobits (16 kilobytes).
  • Low power consumption: The device operates at low power, making it suitable for battery-powered applications.
  • High-speed operation: It provides fast read and write access times.
  • Reliable: The BR24G128FVJ-3GTE2 ensures data integrity through built-in error detection and correction mechanisms.

Package

The BR24G128FVJ-3GTE2 is available in a compact SOP-8 package.

Essence

This product is an essential component for storing critical data in electronic systems.

Packaging/Quantity

The BR24G128FVJ-3GTE2 is typically packaged in reels containing 2,000 units.

Specifications

  • Memory capacity: 128 kilobits (16 kilobytes)
  • Interface: I2C
  • Operating voltage: 1.7V to 5.5V
  • Operating temperature range: -40°C to +85°C
  • Data retention: 10 years (at 55°C)
  • Write endurance: 1 million cycles

Detailed Pin Configuration

The BR24G128FVJ-3GTE2 features an SOP-8 package with the following pin configuration:

  1. VSS: Ground
  2. SDA: Serial Data Input/Output
  3. SCL: Serial Clock Input
  4. WP: Write Protect
  5. VCC: Power Supply
  6. NC: No Connection
  7. NC: No Connection
  8. VSS: Ground

Functional Features

  • Random access: The BR24G128FVJ-3GTE2 allows random read and write operations.
  • Page write mode: It supports fast data writing by allowing multiple bytes to be written in a single operation.
  • Software write protection: The device can be protected from accidental writes through software commands.
  • Sequential read mode: This feature enables efficient reading of consecutive memory locations.

Advantages and Disadvantages

Advantages

  • High storage capacity
  • Low power consumption
  • Fast operation
  • Reliable data integrity mechanisms

Disadvantages

  • Limited compatibility with other interface protocols
  • Relatively small memory size compared to some alternatives

Working Principles

The BR24G128FVJ-3GTE2 utilizes I2C (Inter-Integrated Circuit) communication protocol for data transfer between the memory device and the host microcontroller. It employs a combination of floating gate and tunnel oxide technologies to achieve non-volatile data storage. The device operates by applying appropriate voltage levels to the control pins, enabling read and write operations.

Detailed Application Field Plans

The BR24G128FVJ-3GTE2 finds applications in various electronic systems, including but not limited to: - Consumer electronics - Industrial automation - Automotive systems - Medical devices - Smart meters

Detailed and Complete Alternative Models

  1. AT24C256C: 256 kilobit (32 kilobyte) I2C EEPROM
  2. M95M02-DRMN6TP: 2 megabit (256 kilobyte) SPI EEPROM
  3. FM25V10-GTR: 1 megabit (128 kilobyte) Serial F-RAM

These alternative models offer different capacities and interface options, providing flexibility for various design requirements.

Word count: 514 words

Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von BR24G128FVJ-3GTE2 in technischen Lösungen auf

Sure! Here are 10 common questions and answers related to the application of BR24G128FVJ-3GTE2 in technical solutions:

  1. Q: What is the capacity of the BR24G128FVJ-3GTE2 EEPROM? A: The BR24G128FVJ-3GTE2 has a capacity of 128 kilobits (16 kilobytes).

  2. Q: What is the operating voltage range for the BR24G128FVJ-3GTE2? A: The operating voltage range for this EEPROM is 1.7V to 5.5V.

  3. Q: Can I use the BR24G128FVJ-3GTE2 in automotive applications? A: Yes, the BR24G128FVJ-3GTE2 is suitable for automotive applications as it meets the necessary requirements.

  4. Q: Does the BR24G128FVJ-3GTE2 support high-speed data transfer? A: Yes, this EEPROM supports high-speed data transfer with a maximum frequency of 1 MHz.

  5. Q: Is the BR24G128FVJ-3GTE2 compatible with I2C communication protocol? A: Yes, the BR24G128FVJ-3GTE2 uses the I2C communication protocol for interfacing with microcontrollers.

  6. Q: Can I write data to the BR24G128FVJ-3GTE2 multiple times? A: Yes, this EEPROM supports multiple write cycles, allowing you to update or modify stored data.

  7. Q: What is the typical data retention period of the BR24G128FVJ-3GTE2? A: The BR24G128FVJ-3GTE2 has a typical data retention period of 10 years.

  8. Q: Does the BR24G128FVJ-3GTE2 have built-in write protection features? A: Yes, this EEPROM provides hardware and software write protection options to prevent accidental data modification.

  9. Q: Can I use the BR24G128FVJ-3GTE2 in low-power applications? A: Absolutely! The BR24G128FVJ-3GTE2 is designed for low-power consumption, making it suitable for battery-operated devices.

  10. Q: Are there any specific temperature requirements for the BR24G128FVJ-3GTE2? A: The BR24G128FVJ-3GTE2 operates within a temperature range of -40°C to +85°C, making it suitable for various environments.

Please note that these answers are based on general information about the BR24G128FVJ-3GTE2 and may vary depending on specific application requirements.