MBT35200MT1G

Product Overview

Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: High voltage, high current capability
Package: TO-220AB
Essence: NPN Bipolar Power Transistor
Packaging/Quantity: Tape & Reel / 2500 per reel

Specifications

Collector-Emitter Voltage (VCEO): 400V
Collector Current (IC): 20A
Power Dissipation (PD): 80W
DC Current Gain (hFE): 15-60
Transition Frequency (fT): 3MHz

Detailed Pin Configuration

Base (B)
Collector (C)
Emitter (E)

Functional Features

High voltage capability
Low saturation voltage
Fast switching speed

Advantages and Disadvantages

Advantages: - High power handling capability - Suitable for high voltage applications - Fast switching speed

Disadvantages: - Relatively low DC current gain - Larger package size compared to SMD alternatives

Working Principles

The MBT35200MT1G operates based on the principles of bipolar junction transistors. When a small current flows into the base terminal, it controls a larger current between the collector and emitter terminals, allowing for amplification or switching of electronic signals.

Detailed Application Field Plans

This transistor is commonly used in power supply circuits, audio amplifiers, motor control circuits, and high voltage switching applications due to its high voltage and current capabilities.

Detailed and Complete Alternative Models

TIP31C
TIP32C
MJ15003
MJ15004

Note: The above list is not exhaustive and there are many other alternative models available in the market.

In conclusion, the MBT35200MT1G is a high-voltage NPN bipolar power transistor with a wide range of applications in electronic circuits requiring high power handling capabilities. Its specifications and characteristics make it suitable for various industrial and consumer electronic applications.

Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von MBT35200MT1G in technischen Lösungen auf

Sure, here are 10 common questions and answers related to the application of MBT35200MT1G in technical solutions:

Q: What is the maximum continuous collector current for MBT35200MT1G? A: The maximum continuous collector current for MBT35200MT1G is 200 mA.
Q: What is the maximum collector-emitter voltage for MBT35200MT1G? A: The maximum collector-emitter voltage for MBT35200MT1G is 40 V.
Q: What is the typical DC current gain (hFE) for MBT35200MT1G? A: The typical DC current gain (hFE) for MBT35200MT1G is 100-300.
Q: What is the power dissipation of MBT35200MT1G? A: The power dissipation of MBT35200MT1G is 625 mW.
Q: What are the typical applications for MBT35200MT1G? A: Typical applications for MBT35200MT1G include general-purpose switching and amplification in electronic circuits.
Q: Is MBT35200MT1G suitable for use in low-power applications? A: Yes, MBT35200MT1G is suitable for use in low-power applications due to its low collector current and voltage ratings.
Q: What is the operating temperature range for MBT35200MT1G? A: The operating temperature range for MBT35200MT1G is -55°C to 150°C.
Q: Can MBT35200MT1G be used in high-frequency applications? A: MBT35200MT1G can be used in moderate frequency applications, but it may not be suitable for very high-frequency applications due to its transition frequency.
Q: Does MBT35200MT1G require external heat sinking for certain applications? A: Yes, for high-power or high-temperature applications, external heat sinking may be required for MBT35200MT1G.
Q: Are there any specific considerations for PCB layout when using MBT35200MT1G? A: It is recommended to follow standard PCB layout guidelines for proper thermal management and electrical performance when using MBT35200MT1G in technical solutions.