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KSE13003H2AS
Product Overview
Category:
The KSE13003H2AS belongs to the category of power transistors.
Use:
It is commonly used in electronic circuits for amplification and switching applications.
Characteristics:
- High voltage capability
- Low spread of dynamic parameters
- High switching speed
- Wide SOA (Safe Operating Area)
Package:
The KSE13003H2AS is typically available in a TO-220 package.
Essence:
This transistor is essential for power control and amplification in various electronic devices and systems.
Packaging/Quantity:
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Collector-Emitter Voltage (VCEO): 700V
- Collector Current (IC): 8A
- Power Dissipation (PD): 80W
- DC Current Gain (hFE): 10-30
- Transition Frequency (fT): 4MHz
Detailed Pin Configuration
The KSE13003H2AS has a standard TO-220 pin configuration: 1. Base (B) 2. Collector (C) 3. Emitter (E)
Functional Features
- High voltage capability allows for use in high-power applications.
- Low spread of dynamic parameters ensures consistent performance across different units.
- High switching speed enables efficient switching operations.
- Wide Safe Operating Area (SOA) provides protection against overloads and short circuits.
Advantages and Disadvantages
Advantages
- High voltage capability
- Low spread of dynamic parameters
- High switching speed
- Wide Safe Operating Area (SOA)
Disadvantages
- Relatively low DC current gain compared to some alternative models
- Limited frequency response for high-frequency applications
Working Principles
The KSE13003H2AS operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its collector and emitter terminals through the modulation of the base current.
Detailed Application Field Plans
The KSE13003H2AS is widely used in the following applications: - Switching power supplies - Electronic ballasts - Motor control circuits - Audio amplifiers - Inverters
Detailed and Complete Alternative Models
Some alternative models to the KSE13003H2AS include: - MJE13003 - MJF13003 - 2SC5200 - TIP3055
In conclusion, the KSE13003H2AS is a versatile power transistor with high voltage capability, making it suitable for a wide range of electronic applications. Its characteristics, functional features, and application field plans make it an essential component in various electronic systems.
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Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von KSE13003H2AS in technischen Lösungen auf
What is the maximum collector current of KSE13003H2AS?
- The maximum collector current of KSE13003H2AS is 15A.
What is the maximum collector-emitter voltage of KSE13003H2AS?
- The maximum collector-emitter voltage of KSE13003H2AS is 700V.
What is the typical hFE (DC current gain) of KSE13003H2AS?
- The typical hFE of KSE13003H2AS is 8-20 at IC = 4A, VCE = 5V.
What are the typical applications for KSE13003H2AS?
- Typical applications for KSE13003H2AS include electronic ballasts, switch mode power supplies, and general purpose inverters.
What is the maximum power dissipation of KSE13003H2AS?
- The maximum power dissipation of KSE13003H2AS is 150W.
What is the thermal resistance junction to case (RthJC) of KSE13003H2AS?
- The thermal resistance junction to case (RthJC) of KSE13003H2AS is 1.67°C/W.
Is KSE13003H2AS RoHS compliant?
- Yes, KSE13003H2AS is RoHS compliant.
What is the storage temperature range for KSE13003H2AS?
- The storage temperature range for KSE13003H2AS is -55°C to 150°C.
Does KSE13003H2AS have built-in protection features?
- No, KSE13003H2AS does not have built-in protection features and external protection circuitry may be required.
What are the recommended soldering conditions for KSE13003H2AS?
- The recommended soldering conditions for KSE13003H2AS include a soldering temperature of 260°C for 10 seconds.