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PDTA113EE,115
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PDTA113EE,115

Product Overview

Category

PDTA113EE,115 belongs to the category of small signal transistors.

Use

It is commonly used for amplification and switching purposes in electronic circuits.

Characteristics

  • Small size
  • Low power consumption
  • High gain
  • Fast switching speed

Package

The PDTA113EE,115 comes in a SOT416 (SC-75) package.

Essence

This transistor is essential for low-power applications where space is limited.

Packaging/Quantity

It is typically available in reels with a quantity of 3000 units per reel.

Specifications

  • Collector-Base Voltage: 50V
  • Collector Current: 100mA
  • Total Power Dissipation: 200mW
  • Transition Frequency: 250MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The PDTA113EE,115 has three pins: 1. Base (B) 2. Emitter (E) 3. Collector (C)

Functional Features

  • High voltage gain
  • Low noise
  • Fast switching characteristics

Advantages

  • Small form factor
  • Low power consumption
  • Suitable for high-frequency applications

Disadvantages

  • Limited maximum current and voltage ratings
  • Sensitive to overvoltage conditions

Working Principles

The PDTA113EE,115 operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its terminals to amplify or switch electronic signals.

Detailed Application Field Plans

The PDTA113EE,115 is widely used in: - Audio amplifiers - Signal processing circuits - Oscillator circuits - RF amplifiers

Detailed and Complete Alternative Models

Some alternative models to PDTA113EE,115 include: - BC847B - 2N3904 - MMBT3904 - BC846B

In conclusion, the PDTA113EE,115 is a versatile small signal transistor that offers high performance in a compact package, making it suitable for various low-power electronic applications.

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Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von PDTA113EE,115 in technischen Lösungen auf

  1. What is PDTA113EE,115?

    • PDTA113EE,115 is a high-performance NPN bipolar transistor in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.

  2. What are the typical applications of PDTA113EE,115?

    • It is commonly used in general-purpose switching and amplification applications in technical solutions.

  3. What is the maximum collector current (IC) rating for PDTA113EE,115?

    • The maximum collector current (IC) rating for PDTA113EE,115 is 100mA.

  4. What is the maximum collector-base voltage (VCBO) for PDTA113EE,115?

    • The maximum collector-base voltage (VCBO) for PDTA113EE,115 is 50V.

  5. What is the maximum power dissipation (Ptot) for PDTA113EE,115?

    • The maximum power dissipation (Ptot) for PDTA113EE,115 is 200mW.

  6. What are the key features of PDTA113EE,115?

    • Some key features include high current gain, low collector-emitter saturation voltage, and low equivalent on-resistance.

  7. Can PDTA113EE,115 be used in high-frequency applications?

    • Yes, PDTA113EE,115 can be used in high-frequency applications due to its high transition frequency (fT).

  8. Is PDTA113EE,115 suitable for battery-powered applications?

    • Yes, PDTA113EE,115 is suitable for battery-powered applications due to its low collector-emitter saturation voltage.

  9. What are the recommended operating and storage temperatures for PDTA113EE,115?

    • The recommended operating temperature range is -55°C to +150°C, and the storage temperature range is -65°C to +150°C.

  10. Are there any alternative or complementary transistors to PDTA113EE,115?

    • Yes, complementary transistors such as PDTA114EE,115 and PDTA123EE,115 can be considered as alternatives for specific applications.