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2N7002BKV,115
Product Overview
Category
The 2N7002BKV,115 is a small-signal MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) belonging to the semiconductor category.
Use
It is commonly used for switching and amplification applications in electronic circuits.
Characteristics
- Low threshold voltage
- Low input capacitance
- Fast switching speed
- Small package size
Package
The 2N7002BKV,115 is typically available in a SOT-23 package.
Essence
This MOSFET serves as a fundamental component in electronic devices, enabling efficient signal control and amplification.
Packaging/Quantity
It is usually supplied in reels with varying quantities depending on the manufacturer's specifications.
Specifications
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 310mA
- Power Dissipation (PD): 200mW
- Threshold Voltage (VGS(th)): 1.3V - 2.5V
- Input Capacitance (Ciss): 45pF
Detailed Pin Configuration
The 2N7002BKV,115 typically has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)
Functional Features
- Low on-resistance
- Enhanced ESD protection
- High-speed switching capability
Advantages and Disadvantages
Advantages
- Small form factor
- Low power consumption
- Fast switching speed
Disadvantages
- Limited maximum current handling capacity
- Sensitivity to static electricity
Working Principles
The 2N7002BKV,115 operates based on the principle of controlling the flow of current between the source and drain terminals using an electric field generated by the gate terminal.
Detailed Application Field Plans
The 2N7002BKV,115 finds extensive use in various applications, including: - Switching circuits - Amplification stages - Signal routing in audio devices - LED driver circuits
Detailed and Complete Alternative Models
Some alternative models to the 2N7002BKV,115 include: - BS170 - IRF530 - FQP30N06L
In conclusion, the 2N7002BKV,115 MOSFET offers a compact and efficient solution for signal control and amplification in electronic circuits, making it a versatile component in modern electronics.
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Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von 2N7002BKV,115 in technischen Lösungen auf
What is the maximum drain-source voltage for 2N7002BKV,115?
- The maximum drain-source voltage for 2N7002BKV,115 is 60V.
What is the continuous drain current rating of 2N7002BKV,115?
- The continuous drain current rating of 2N7002BKV,115 is 310mA.
What is the threshold voltage of 2N7002BKV,115?
- The threshold voltage of 2N7002BKV,115 typically ranges from 0.8V to 3V.
Can 2N7002BKV,115 be used for level shifting applications?
- Yes, 2N7002BKV,115 can be used for level shifting due to its low threshold voltage and high input impedance.
Is 2N7002BKV,115 suitable for switching applications in low-power circuits?
- Yes, 2N7002BKV,115 is suitable for switching applications in low-power circuits due to its low threshold voltage and low on-resistance.
What are the typical applications of 2N7002BKV,115 in technical solutions?
- Typical applications include load switching, small signal amplification, level shifting, and low-power switching.
Does 2N7002BKV,115 require a heat sink for normal operation?
- No, 2N7002BKV,115 typically does not require a heat sink for normal operation in low-power applications.
What is the maximum junction temperature for 2N7002BKV,115?
- The maximum junction temperature for 2N7002BKV,115 is 150°C.
Can 2N7002BKV,115 be used in battery-powered applications?
- Yes, 2N7002BKV,115 can be used in battery-powered applications due to its low power consumption and low threshold voltage.
Are there any specific layout considerations when using 2N7002BKV,115 in a circuit?
- It is recommended to minimize the length of the traces connecting the 2N7002BKV,115 to reduce parasitic inductance and ensure proper performance.