RC28F128P30B85A

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory for long-term data storage
• Packaging/Quantity: Available in various package options; quantity per package varies

Specifications

• Capacity: 128 Megabits (16 Megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Access Time: 70 ns
• Data Retention: Up to 20 years
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

The RC28F128P30B85A flash memory IC has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Reset/byte enable control
9. WP#/ACC: Write protect control
10. RY/BY#: Ready/busy status output
11. NC: No connection
12. VPP: Programming voltage
13. A19-A21: Additional address inputs
14. A22/A-1: Additional address input or address line -1
15. A-2: Address line -2
16. A-3: Address line -3
17. A-4: Address line -4
18. A-5: Address line -5
19. A-6: Address line -6
20. A-7: Address line -7

Functional Features

• High-speed data transfer with fast access times
• Non-volatile memory retains data even when power is disconnected
• Reliable and durable for long-term storage
• Easy integration into electronic devices due to compact package size
• Low power consumption for efficient operation

Advantages and Disadvantages

Advantages

• Large storage capacity for storing a significant amount of data
• Fast read/write speeds enable quick data retrieval and updates
• Wide operating temperature range allows usage in various environments
• High endurance with 100,000 erase/program cycles
• Compact package size facilitates integration into space-constrained devices

Disadvantages

• Limited capacity compared to higher-end flash memory options
• Parallel interface may not be suitable for all applications
• Relatively high power consumption compared to some newer memory technologies

Working Principles

The RC28F128P30B85A flash memory operates based on the principles of floating-gate transistors. It utilizes a grid of memory cells, each consisting of a floating gate and a control gate. The presence or absence of an electric charge on the floating gate determines whether the cell stores a "0" or "1" bit.

During programming, a high voltage is applied to the control gate, allowing electrons to tunnel through the insulating layer onto the floating gate. This process traps the charge and alters the cell's state. Erasing is achieved by applying a higher voltage that removes the trapped charge from the floating gate.

When reading data, the control gate voltage is adjusted to determine the threshold voltage of the memory cell. By comparing this threshold voltage to a reference level, the stored data can be accurately retrieved.

Detailed Application Field Plans

The RC28F128P30B85A flash memory finds applications in various electronic devices, including:

1. Mobile phones and smartphones
2. Digital cameras
3. Portable media players
4. Solid-state drives (SSDs)
5. Automotive electronics
6. Industrial control systems
7. Embedded systems

Detailed and Complete Alternative Models

1. RC28F128P30B85: Similar specifications and features, but without the "A" suffix.
2. RC28F128P30B85B: Upgraded version with enhanced performance and additional features.
3. RC28F128P30B85C: Lower-cost variant with reduced capacity and slightly slower access times.

These alternative models offer similar functionality and compatibility, providing options for different cost and performance requirements.

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