N25Q256A13EF840E

Basic Information Overview

• Category: Non-volatile Memory
• Use: Data storage and retrieval
• Characteristics:
  • High capacity
  • Fast read/write speeds
  • Low power consumption
• Package: Surface Mount Technology (SMT)
• Essence: Flash memory chip
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Capacity: 256 Megabits (32 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycles: 100,000 cycles (typical)

Detailed Pin Configuration

The N25Q256A13EF840E has a total of 8 pins. The pin configuration is as follows:

1. Chip Select (/CS) - Used to enable or disable the chip for communication.
2. Serial Clock (SCLK) - Provides the clock signal for data transfer.
3. Serial Data Input (SI) - Used to input data into the chip.
4. Serial Data Output (SO) - Outputs data from the chip.
5. Hold (/HOLD) - Used to pause ongoing operations.
6. Write Protect (/WP) - Enables or disables write protection.
7. Ground (GND) - Connected to the ground reference.
8. Power Supply (VCC) - Connected to the power source.

Functional Features

• High-speed data transfer: The N25Q256A13EF840E offers fast read and write speeds, allowing for efficient data storage and retrieval.
• Reliable performance: With its high endurance and low power consumption, this flash memory chip ensures reliable operation over an extended period.
• Flexible integration: The SPI interface enables easy integration with various microcontrollers and other devices.
• Secure data storage: The chip supports hardware-based write protection, ensuring the security of stored data.

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Low power consumption - Easy integration with SPI interface

Disadvantages: - Limited erase/program cycles (100,000 cycles) - Relatively high cost compared to other memory options

Working Principles

The N25Q256A13EF840E is based on the NAND flash memory technology. It utilizes a grid of memory cells that store data in a non-volatile manner. When data is written, it is stored by charging or discharging the floating gate within each memory cell. This charge determines whether the cell represents a "0" or a "1". During read operations, the charge level is measured to retrieve the stored data.

Detailed Application Field Plans

The N25Q256A13EF840E is widely used in various applications, including but not limited to: - Solid-state drives (SSDs) - Networking equipment - Automotive electronics - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

• N25Q128A13EF840E: 128 Megabit version of the same flash memory chip.
• N25Q512A13EF840E: 512 Megabit version of the same flash memory chip.
• N25Q256A11EF840E: Similar flash memory chip with different pin configuration.

Note: The above alternative models are provided for reference and may have slight variations in specifications and features.

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