MT46V64M4P-5B:M

Product Overview

Category

The MT46V64M4P-5B:M belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in computer systems, mobile devices, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High-speed operation: The MT46V64M4P-5B:M offers fast data access and transfer rates, making it suitable for applications that demand quick processing.
• Large storage capacity: With a capacity of 64 megabits (8 megabytes), this DRAM chip provides ample space for storing data.
• Low power consumption: The MT46V64M4P-5B:M is designed to consume minimal power, ensuring energy efficiency in electronic devices.
• Wide temperature range: This chip can operate reliably across a broad temperature range, making it suitable for various environments.
• RoHS compliant: The product adheres to the Restriction of Hazardous Substances directive, ensuring its environmental friendliness.

Package and Quantity

The MT46V64M4P-5B:M is available in a compact and standardized package. It is commonly sold in tape and reel packaging, with each reel containing a specific quantity of chips.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 64 Megabits x 4
• Supply Voltage: 3.3V
• Speed Grade: -5B
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The MT46V64M4P-5B:M features a specific pin configuration that enables proper connectivity and functionality within a circuit. The detailed pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. VSS
7. DQ4
8. DQ5
9. DQ6
10. DQ7
11. VSS
12. DQ8
13. DQ9
14. DQ10
15. DQ11
16. VSS
17. DQ12
18. DQ13
19. DQ14
20. DQ15
21. VSS
22. A0
23. A1
24. A2
25. A3
26. A4
27. A5
28. A6
29. A7
30. A8
31. A9
32. A10
33. A11
34. A12
35. A13
36. A14
37. A15
38. A16
39. A17
40. A18
41. A19
42. A20
43. A21
44. A22
45. A23
46. A24
47. A25
48. A26
49. A27
50. A28
51. A29
52. A30
53. A31
54. /CAS
55. /RAS
56. /WE
57. /CS
58. /CKE
59. /DQM0
60. /DQM1
61. VDD
62. VSS
63. VDDQ
64. VSS

Functional Features

The MT46V64M4P-5B:M offers the following functional features:

• Random access: The chip allows for random access to any memory location, enabling efficient data retrieval.
• Refresh capability: It incorporates an internal refresh mechanism to maintain data integrity over time.
• Burst mode: The DRAM chip supports burst mode operations, allowing for faster consecutive data transfers.
• Auto precharge: It automatically precharges the memory cells after a read or write operation, optimizing performance.

Advantages and Disadvantages

Advantages

• High-speed operation enables quick data access and transfer.
• Large storage capacity accommodates substantial amounts of data.
• Low power consumption ensures energy efficiency.
• Wide temperature range allows for reliable operation in various environments.
• RoHS compliance promotes environmental friendliness.

Disadvantages

• As a dynamic memory technology, it requires periodic refreshing to retain data, which can introduce latency.
• Vulnerable to electrical noise and interference, requiring careful circuit design and shielding.

Working Principles

The MT46V64M4P-5B:M operates based on the principles of dynamic random access memory. It stores data as charge in tiny capacitors within its memory cells. To read or write data, the chip applies voltage to specific rows and columns, activating the corresponding capacitors. The stored charge is then sensed and amplified to retrieve or modify