MT46H256M32R4JV-5 WT:B TR

Basic Information Overview

• Category: Memory module
• Use: Storage and retrieval of data in electronic devices
• Characteristics: High capacity, fast data transfer rate, low power consumption
• Package: Integrated circuit (IC) package
• Essence: Dynamic Random Access Memory (DRAM) module
• Packaging/Quantity: Typically sold in bulk quantities

Specifications

• Model: MT46H256M32R4JV-5 WT:B TR
• Capacity: 256 megabits (32 megabytes)
• Organization: 256M x 32
• Speed: 5 nanoseconds (ns)
• Voltage: 1.8 volts (V)
• Temperature Range: Wide temperature range (-40°C to +85°C)

Detailed Pin Configuration

The MT46H256M32R4JV-5 WT:B TR memory module has a specific pin configuration that allows it to be connected to the host device. The detailed pin configuration is as follows:

1. VDD - Power supply voltage
2. DQ0-DQ31 - Data input/output pins
3. BA0-BA1 - Bank address pins
4. A0-A13 - Row/column address pins
5. RAS - Row address strobe
6. CAS - Column address strobe
7. WE - Write enable
8. CK - Clock input
9. CKE - Clock enable
10. CS - Chip select
11. DM0-DM3 - Data mask pins
12. DQS - Data strobe
13. DQS# - Complementary data strobe
14. VSS - Ground

Functional Features

• High-speed data transfer: The MT46H256M32R4JV-5 WT:B TR memory module offers fast data transfer rates, allowing for efficient storage and retrieval of data.
• Low power consumption: This memory module is designed to consume minimal power, making it suitable for battery-powered devices.
• Wide temperature range: The module can operate reliably in a wide temperature range, making it suitable for various environments.

Advantages and Disadvantages

Advantages: - High capacity: The module offers a large storage capacity, allowing for the storage of a significant amount of data. - Fast data transfer rate: The high-speed data transfer capability ensures quick access to stored information. - Low power consumption: The module's low power consumption helps prolong battery life in portable devices.

Disadvantages: - Volatile memory: As a dynamic memory module, the data stored in it is lost when power is removed. - Relatively higher cost: Compared to other types of memory, DRAM modules can be more expensive.

Working Principles

The MT46H256M32R4JV-5 WT:B TR memory module operates based on the principles of dynamic random access memory (DRAM). It stores data in capacitors within its integrated circuits. To retain the data, the capacitors need to be periodically refreshed. When the host device requests data, the module retrieves it from the capacitors and transfers it to the device.

Detailed Application Field Plans

The MT46H256M32R4JV-5 WT:B TR memory module finds applications in various electronic devices, including: 1. Personal computers 2. Laptops and notebooks 3. Servers 4. Mobile phones and tablets 5. Gaming consoles 6. Networking equipment

Detailed and Complete Alternative Models

1. MT46H128M32L2KQ-5 WT:B TR
2. MT46H64M32L2KQ-5 WT:B TR
3. MT46H32M16LFBF-5 WT:B TR
4. MT46H16M16LFBF-5 WT:B TR
5. MT46H8M16LFBF-5 WT:B TR

These alternative models offer different capacities and configurations to suit various memory requirements.

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