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MT41K512M8RH-107:E TR

MT41K512M8RH-107:E TR

Product Overview

Category

MT41K512M8RH-107:E TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in computer systems, servers, and high-performance computing applications that require fast and efficient data storage and retrieval.

Characteristics

  • High-speed operation: The MT41K512M8RH-107:E TR offers fast data transfer rates, enabling quick access to stored information.
  • Large capacity: With a capacity of 512 megabits, this DRAM module can store a significant amount of data.
  • Low power consumption: The module is designed to consume minimal power, making it energy-efficient.
  • Reliable performance: It provides reliable and stable performance, ensuring data integrity.

Package

The MT41K512M8RH-107:E TR comes in a compact and standardized package, conforming to industry standards for easy integration into various devices.

Essence

The essence of this product lies in its ability to provide high-speed and reliable data storage and retrieval capabilities, essential for modern computing systems.

Packaging/Quantity

The MT41K512M8RH-107:E TR is typically packaged in trays or reels, containing multiple units per package. The exact quantity may vary depending on the supplier and customer requirements.

Specifications

  • Memory Type: DDR3 SDRAM
  • Organization: 512M x 8
  • Operating Voltage: 1.35V
  • Speed Grade: 107
  • Refresh Rate: 8K cycles/32ms
  • Interface: Parallel
  • Pin Count: 78
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT41K512M8RH-107:E TR has a total of 78 pins, each serving a specific function. The detailed pin configuration is as follows:

(Pin Number) - (Pin Name) - (Function) 1 - VSS - Ground 2 - DQ0 - Data Input/Output 0 3 - DQ1 - Data Input/Output 1 4 - DQ2 - Data Input/Output 2 5 - DQ3 - Data Input/Output 3 6 - DQ4 - Data Input/Output 4 7 - DQ5 - Data Input/Output 5 8 - DQ6 - Data Input/Output 6 9 - DQ7 - Data Input/Output 7 10 - VDD - Power Supply 11 - VDDQ - Power Supply for I/O Buffers 12 - DQ8 - Data Input/Output 8 13 - DQ9 - Data Input/Output 9 14 - DQ10 - Data Input/Output 10 15 - DQ11 - Data Input/Output 11 16 - DQ12 - Data Input/Output 12 17 - DQ13 - Data Input/Output 13 18 - DQ14 - Data Input/Output 14 19 - DQ15 - Data Input/Output 15 20 - VSS - Ground 21 - A0 - Address Input 0 22 - A1 - Address Input 1 23 - A2 - Address Input 2 24 - A3 - Address Input 3 25 - A4 - Address Input 4 26 - A5 - Address Input 5 27 - A6 - Address Input 6 28 - A7 - Address Input 7 29 - A8 - Address Input 8 30 - A9 - Address Input 9 31 - A10 - Address Input 10 32 - A11 - Address Input 11 33 - A12 - Address Input 12 34 - A13 - Address Input 13 35 - A14 - Address Input 14 36 - BA0 - Bank Address Input 0 37 - BA1 - Bank Address Input 1 38 - RAS - Row Address Strobe 39 - CAS - Column Address Strobe 40 - WE - Write Enable 41 - CS - Chip Select 42-78 - NC - No Connection

Functional Features

The MT41K512M8RH-107:E TR offers the following functional features:

  1. High-speed data transfer: The module supports fast data transfer rates, allowing for quick access to stored information.
  2. Low power consumption: It is designed to operate with minimal power consumption, making it energy-efficient.
  3. Error correction: The module incorporates error correction techniques to ensure data integrity and reliability.
  4. Compatibility: It is compatible with various computer systems and servers, providing flexibility in integration.

Advantages and Disadvantages

Advantages

  • High-speed operation enables efficient data processing.
  • Large capacity allows for storing a significant amount of data.
  • Low

Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von MT41K512M8RH-107:E TR in technischen Lösungen auf

Sure! Here are 10 common questions and answers related to the application of MT41K512M8RH-107:E TR in technical solutions:

  1. Question: What is the capacity of the MT41K512M8RH-107:E TR memory module?
    Answer: The MT41K512M8RH-107:E TR has a capacity of 4 gigabits (512 megabytes).

  2. Question: What is the operating voltage range for this memory module?
    Answer: The operating voltage range for the MT41K512M8RH-107:E TR is 1.35V.

  3. Question: What is the maximum clock frequency supported by this memory module?
    Answer: The MT41K512M8RH-107:E TR supports a maximum clock frequency of 1070 MHz.

  4. Question: Is this memory module compatible with DDR3 or DDR4 systems?
    Answer: The MT41K512M8RH-107:E TR is compatible with DDR3 systems.

  5. Question: Can I use multiple MT41K512M8RH-107:E TR modules together in a system?
    Answer: Yes, you can use multiple modules together to increase the total memory capacity.

  6. Question: What is the CAS latency of the MT41K512M8RH-107:E TR memory module?
    Answer: The CAS latency of this module is CL15.

  7. Question: Does this memory module support ECC (Error Correction Code)?
    Answer: Yes, the MT41K512M8RH-107:E TR supports ECC for error detection and correction.

  8. Question: What is the temperature range for reliable operation of this memory module?
    Answer: The MT41K512M8RH-107:E TR is designed to operate reliably within a temperature range of -40°C to +85°C.

  9. Question: Can I use this memory module in industrial or automotive applications?
    Answer: Yes, the MT41K512M8RH-107:E TR is suitable for industrial and automotive applications due to its wide temperature range and reliability.

  10. Question: Is there any specific programming or configuration required for using this memory module?
    Answer: No, the MT41K512M8RH-107:E TR does not require any special programming or configuration. It can be used as a plug-and-play memory module.

Please note that these answers are based on general information about the MT41K512M8RH-107:E TR memory module. For specific technical details and application requirements, it is recommended to refer to the manufacturer's datasheet or consult with technical experts.