MT29F4G08ABADAH4:D

Basic Information Overview

• Category: Memory chip
• Use: Data storage in electronic devices
• Characteristics:
  • Non-volatile memory
  • High storage capacity
  • Fast read and write speeds
• Package: Integrated circuit (IC)
• Essence: Stores digital information in a compact and durable format
• Packaging/Quantity: Typically sold in reels or trays containing multiple chips

Specifications

• Manufacturer: Micron Technology Inc.
• Model: MT29F4G08ABADAH4:D
• Memory Type: NAND Flash
• Capacity: 4 gigabytes (GB)
• Organization: 512 megabytes (MB) x 8 bits
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

1. ALE (Address Latch Enable)
2. CLE (Command Latch Enable)
3. CE (Chip Enable)
4. RE (Read Enable)
5. WE (Write Enable)
6. R/B (Ready/Busy)
7. VCC (Power Supply)
8. GND (Ground)
9. DQ0-DQ7 (Data Input/Output)
10. WP (Write Protect)
11. RP (Reset/Power Down)
12. NC (No Connection)

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• High-speed data transfer
• Error correction capabilities
• Wear-leveling algorithms for extended lifespan
• Block management for efficient data organization
• Bad block management for improved reliability
• Power-saving features
• Support for various interfaces and protocols

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read and write speeds - Non-volatile memory retains data even without power - Compact size - Reliable and durable

Disadvantages: - Limited endurance (finite number of program/erase cycles) - Relatively higher cost compared to other memory technologies - Susceptible to electrical interference or damage if mishandled

Working Principles

MT29F4G08ABADAH4:D is based on NAND flash memory technology. It stores digital information by trapping electric charges in a grid of memory cells. These cells are organized into blocks, which can be individually erased and reprogrammed. When reading data, the stored charges are measured to determine the stored information. Writing involves applying voltage pulses to modify the charge levels in the cells.

Detailed Application Field Plans

MT29F4G08ABADAH4:D is widely used in various electronic devices that require non-volatile data storage, such as: - Solid-state drives (SSDs) - USB flash drives - Memory cards (SD, microSD, etc.) - Embedded systems - Industrial control systems - Automotive electronics - Consumer electronics (smartphones, tablets, etc.)

Detailed and Complete Alternative Models

1. MT29F4G08ABADAH4:E - Similar specifications with minor differences.
2. MT29F4G08ABADAH4:C - Lower operating temperature range.
3. MT29F4G08ABADAH4:B - Higher storage capacity variant.
4. MT29F4G08ABADAH4:A - Lower voltage supply requirement.

(Note: The list above includes only a few alternative models for reference purposes.)

This entry provides an overview of the MT29F4G08ABADAH4:D memory chip, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.