Micron Technology Inc.
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MT29F2G16ABBEAH4-IT:E

MT29F2G16ABBEAH4-IT:E

Product Overview

Category

MT29F2G16ABBEAH4-IT:E belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F2G16ABBEAH4-IT:E offers a storage capacity of 2 gigabits (256 megabytes).
  • Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
  • Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
  • Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
  • Compact package: It comes in a small form factor, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F2G16ABBEAH4-IT:E is packaged in a surface-mount TSOP (Thin Small Outline Package) with 48 pins. It is typically sold in reels containing multiple units.

Specifications

  • Manufacturer: Micron Technology Inc.
  • Part Number: MT29F2G16ABBEAH4-IT:E
  • Memory Type: NAND Flash
  • Density: 2 Gb (gigabits)
  • Organization: 256 M x 8 bits
  • Interface: Parallel
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Up to 10 years
  • Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The detailed pin configuration of MT29F2G16ABBEAH4-IT:E is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. ALE
  28. CLE
  29. RE#
  30. WE#
  31. WP#
  32. R/B#
  33. CE#
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. GND

Functional Features

  • Page Program Operation: The MT29F2G16ABBEAH4-IT:E supports page program operations, allowing data to be written in small increments.
  • Block Erase Operation: It enables the erasure of entire blocks of data, providing flexibility in managing storage space.
  • Random Access: This NAND flash memory allows for random access to individual memory cells, facilitating efficient data retrieval.
  • Error Correction Code (ECC): It incorporates ECC algorithms to detect and correct errors, ensuring data integrity.

Advantages and Disadvantages

Advantages

  • High storage capacity
  • Fast data transfer rate
  • Reliable performance
  • Low power consumption
  • Compact package size

Disadvantages

  • Limited endurance compared to other non-volatile memory technologies
  • Relatively higher cost per unit compared to traditional hard disk drives

Working Principles

The MT29F2G16ABBEAH4-IT:E utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information using a floating-gate transistor. When data is written, an electrical charge is applied to the floating gate, altering its state and storing the desired information. To read the data, the charge level of each memory cell is measured, allowing for accurate retrieval of stored information.

Detailed Application Field Plans

The MT29F2G16ABBEAH4-IT:E finds applications in various electronic devices that require non-volatile storage, including: - Smartphones - Tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Alternative Models

Here are some alternative models that offer similar functionality and specifications: - Samsung K9K8G08U0D - Toshiba TH58NVG6D2FLA89 - Intel JS29F32G08

Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von MT29F2G16ABBEAH4-IT:E in technischen Lösungen auf

  1. Question: What is the capacity of the MT29F2G16ABBEAH4-IT:E memory chip?
    Answer: The MT29F2G16ABBEAH4-IT:E has a capacity of 2 gigabytes (GB).

  2. Question: What is the interface type supported by this memory chip?
    Answer: The MT29F2G16ABBEAH4-IT:E supports the NAND Flash interface.

  3. Question: What is the operating voltage range for this memory chip?
    Answer: The MT29F2G16ABBEAH4-IT:E operates at a voltage range of 2.7V to 3.6V.

  4. Question: Can this memory chip be used in industrial applications?
    Answer: Yes, the MT29F2G16ABBEAH4-IT:E is suitable for industrial applications due to its extended temperature range and reliability features.

  5. Question: What is the maximum data transfer rate supported by this memory chip?
    Answer: The MT29F2G16ABBEAH4-IT:E supports a maximum data transfer rate of up to 52 megabytes per second (MB/s).

  6. Question: Is this memory chip compatible with various operating systems?
    Answer: Yes, the MT29F2G16ABBEAH4-IT:E is compatible with different operating systems, including Windows, Linux, and embedded systems.

  7. Question: Can this memory chip be used in automotive applications?
    Answer: Yes, the MT29F2G16ABBEAH4-IT:E is designed to meet the requirements of automotive applications, such as infotainment systems and advanced driver-assistance systems (ADAS).

  8. Question: Does this memory chip support wear-leveling algorithms?
    Answer: Yes, the MT29F2G16ABBEAH4-IT:E incorporates wear-leveling algorithms to ensure even distribution of data writes and prolong the lifespan of the memory.

  9. Question: What is the typical erase/program cycle endurance of this memory chip?
    Answer: The MT29F2G16ABBEAH4-IT:E has a typical endurance of 100,000 erase/program cycles.

  10. Question: Can this memory chip be used in space-constrained applications?
    Answer: Yes, the MT29F2G16ABBEAH4-IT:E is available in a small form factor package, making it suitable for space-constrained applications where size is a critical factor.