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MT29F1G08ABAEAH4-ITX:E
Product Overview
Category
MT29F1G08ABAEAH4-ITX:E belongs to the category of NAND Flash Memory.
Use
This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).
Characteristics
- High storage capacity: The MT29F1G08ABAEAH4-ITX:E offers a storage capacity of 1 gigabit (1 Gb), allowing for ample data storage.
- Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
- Reliable performance: The product ensures reliable data retention and endurance, making it suitable for long-term use.
- Compact package: It comes in a small form factor package, enabling easy integration into different electronic devices.
- Low power consumption: The MT29F1G08ABAEAH4-ITX:E is designed to consume minimal power, enhancing battery life in portable devices.
Packaging/Quantity
The MT29F1G08ABAEAH4-ITX:E is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on customer requirements.
Specifications
- Storage Capacity: 1 Gb
- Interface: NAND
- Supply Voltage: 2.7V - 3.6V
- Operating Temperature Range: -40°C to +85°C
- Package Type: TSOP (Thin Small Outline Package)
- Pin Count: 48 pins
Detailed Pin Configuration
The pin configuration of MT29F1G08ABAEAH4-ITX:E is as follows:
- VCC
- ALE
- CLE
- CE#
- RE#
- WE#
- R/B#
- WP#
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- GND
Functional Features
- Page Program Operation: The MT29F1G08ABAEAH4-ITX:E supports fast and efficient page program operations, allowing for quick data storage.
- Block Erase Operation: It enables block erase operations, facilitating the removal of unwanted data.
- Random Access: This NAND flash memory allows random access to specific memory locations, enabling efficient data retrieval.
- Error Correction Code (ECC): The product incorporates ECC algorithms to ensure data integrity and reliability.
- Wear-Leveling: It implements wear-leveling techniques to evenly distribute write operations across memory cells, enhancing overall lifespan.
Advantages and Disadvantages
Advantages
- High storage capacity
- Fast data transfer rate
- Reliable performance
- Compact package
- Low power consumption
Disadvantages
- Limited endurance compared to other non-volatile memory technologies
- Relatively higher cost per unit compared to traditional hard disk drives
Working Principles
The MT29F1G08ABAEAH4-ITX:E utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on its floating gate. The data is accessed by applying appropriate voltages to the control gates and reading the resulting electrical current.
Detailed Application Field Plans
The MT29F1G08ABAEAH4-ITX:E finds application in various electronic devices, including: - Smartphones - Tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems
Detailed and Complete Alternative Models
Some alternative models to MT29F1G08ABAEAH4-ITX:E include: - MT29F1G08ABADAWP-ITX:E - MT29F1G08ABADAWP-IT:E - MT29F1G08ABADAWP-ITE:E - MT29F1G08ABADAWP-ITEH:E
These alternative models offer similar specifications and functionality, providing flexibility for different design requirements.
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Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von MT29F1G08ABAEAH4-ITX:E in technischen Lösungen auf
Question: What is the capacity of the MT29F1G08ABAEAH4-ITX:E memory chip?
Answer: The MT29F1G08ABAEAH4-ITX:E has a capacity of 1 gigabit (128 megabytes).Question: What is the interface type supported by this memory chip?
Answer: The MT29F1G08ABAEAH4-ITX:E supports the NAND Flash interface.Question: What is the operating voltage range for this memory chip?
Answer: The operating voltage range for the MT29F1G08ABAEAH4-ITX:E is typically between 2.7V and 3.6V.Question: Can this memory chip be used in industrial applications?
Answer: Yes, the MT29F1G08ABAEAH4-ITX:E is designed for industrial-grade applications and can withstand harsh environments.Question: What is the maximum data transfer rate supported by this memory chip?
Answer: The MT29F1G08ABAEAH4-ITX:E supports a maximum data transfer rate of up to 50 megabytes per second.Question: Is this memory chip compatible with various operating systems?
Answer: Yes, the MT29F1G08ABAEAH4-ITX:E is compatible with popular operating systems such as Linux, Windows, and embedded systems.Question: Does this memory chip support wear-leveling algorithms?
Answer: Yes, the MT29F1G08ABAEAH4-ITX:E incorporates wear-leveling algorithms to ensure even distribution of write/erase cycles and prolong the lifespan of the memory.Question: Can this memory chip be used in automotive applications?
Answer: Yes, the MT29F1G08ABAEAH4-ITX:E is suitable for automotive applications and meets the necessary quality and reliability standards.Question: What is the temperature range within which this memory chip can operate?
Answer: The MT29F1G08ABAEAH4-ITX:E has an extended temperature range of -40°C to 85°C, making it suitable for a wide range of environments.Question: Is this memory chip backward compatible with older NAND Flash interfaces?
Answer: Yes, the MT29F1G08ABAEAH4-ITX:E is backward compatible with previous generations of NAND Flash interfaces, ensuring compatibility with legacy systems.