MT29F1G08ABADAWP-ITX:D

Product Overview

Category

MT29F1G08ABADAWP-ITX:D belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F1G08ABADAWP-ITX:D offers a storage capacity of 1 gigabit.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F1G08ABADAWP-ITX:D is available in a small form factor, enabling its integration into space-constrained devices.

Package and Quantity

The MT29F1G08ABADAWP-ITX:D is packaged in a surface-mount TSOP (Thin Small Outline Package) with 48 pins. It is typically sold in reels containing multiple units.

Specifications

• Storage Capacity: 1 gigabit
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 52 megabytes per second (MB/s)
• Erase/Program Cycle Endurance: 100,000 cycles
• Data Retention: Up to 10 years

Pin Configuration

The detailed pin configuration of MT29F1G08ABADAWP-ITX:D is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. CE#
19. CLE#
20. ALE#
21. RE#
22. WE#
23. WP#
24. R/B#
25. DQ0
26. DQ1
27. DQ2
28. DQ3
29. DQ4
30. DQ5
31. DQ6
32. DQ7
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• Page Read/Program/Erase: The MT29F1G08ABADAWP-ITX:D supports page-level operations for efficient data management.
• Block Erase: It allows erasing a block of data, enabling faster and more convenient memory management.
• Bad Block Management: This NAND flash memory incorporates mechanisms to handle and manage bad blocks effectively.
• Wear-Leveling: It implements wear-leveling algorithms to distribute write operations evenly across the memory cells, enhancing longevity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Limited endurance (100,000 cycles)
• Requires additional controller circuitry for proper operation

Working Principles

MT29F1G08ABADAWP-ITX:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge applied to it. The memory cells are arranged in blocks, and each block consists of multiple pages.

To write data, the memory controller sends a command along with the address and data to be written. The data is then programmed into the selected page using a specific programming algorithm. Reading data involves sending a read command and address to retrieve the stored information from the desired page.

Detailed Application Field Plans

MT29F1G08ABADAWP-ITX:D finds applications in various electronic devices that require non-volatile storage for data retention. Some common application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

Here are some alternative models that offer similar functionality and features: - MT29F1G08ABAEAWP-ITX:D -