JS28F128J3D75B TR

Product Overview

Category

The JS28F128J3D75B TR belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• Non-volatile: The JS28F128J3D75B TR retains data even when power is turned off.
• High capacity: It offers a storage capacity of 128 gigabits (16 gigabytes).
• Fast access time: The device provides quick access to stored data, ensuring efficient performance.
• Reliable: It has a high endurance and can withstand numerous read and write cycles.
• Compact package: The JS28F128J3D75B TR comes in a small form factor, making it suitable for space-constrained applications.
• RoHS compliant: It adheres to the Restriction of Hazardous Substances directive, ensuring environmental safety.

Packaging/Quantity

The JS28F128J3D75B TR is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on customer requirements.

Specifications

• Memory Type: NAND Flash
• Organization: 128Gb (16GB)
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Access Time: 75ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The JS28F128J3D75B TR has a total of 48 pins. Here is a detailed pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. RE#
31. WE#
32. WP#
33. RY/BY#
34. CE#
35. RB#
36. DQ0
37. DQ1
38. DQ2
39. DQ3
40. DQ4
41. DQ5
42. DQ6
43. DQ7
44. VSS
45. NC
46. NC
47. NC
48. VCC

Functional Features

• Block Erase: The JS28F128J3D75B TR supports block erase operations, allowing for efficient management of data.
• Page Program: It enables fast and reliable programming of individual memory pages.
• Read/Write Protection: The device offers hardware-based protection mechanisms to prevent unauthorized access or modification of stored data.
• Error Correction Code (ECC): ECC algorithms are implemented to ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Compact form factor
• Reliable performance
• RoHS compliant

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Higher cost per gigabyte compared to traditional hard disk drives

Working Principles

The JS28F128J3D75B TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using different voltage levels. When data is written, the memory cells are programmed by applying specific voltage levels to the appropriate bit lines. Reading data involves sensing the voltage levels stored in the memory cells and converting them back into digital information.

Detailed Application Field Plans

The JS28F128J3D75B TR finds applications in various electronic devices that require high-capacity and reliable data storage. Some specific application fields include:

1. Smartphones and tablets: The flash memory device provides ample storage for apps, media files, and user data.
2. Digital cameras: It allows for storing a large number of high-resolution photos and videos.
3. Solid-state drives (SSDs): The JS28F128J3D75B TR serves as the primary storage medium in SSDs, offering fast access times and improved system performance.

Detailed and Complete Alternative Models

• JS28F128J3D75B TR is part of the JS28F128J3D family, which includes