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1N5995B-TP
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1N5995B-TP

Product Overview

The 1N5995B-TP is a diode belonging to the category of semiconductor devices. It is commonly used in electronic circuits for its unique characteristics, and it comes in a standard package with specific packaging and quantity details.

Basic Information

  • Category: Semiconductor Diode
  • Use: Rectification and voltage regulation in electronic circuits
  • Characteristics: High current capability, low forward voltage drop
  • Package: DO-201AD
  • Packaging/Quantity: Bulk packaging, typically available in reels of 500 units

Specifications

  • Voltage Rating: 24V
  • Current Rating: 3A
  • Forward Voltage Drop: 0.7V at 1A
  • Reverse Leakage Current: 10μA at 20V

Detailed Pin Configuration

The 1N5995B-TP diode has a standard DO-201AD package with two leads. The anode is connected to the positive terminal, and the cathode is connected to the negative terminal.

Functional Features

The 1N5995B-TP diode exhibits high current capability, making it suitable for applications requiring efficient rectification and voltage regulation. Its low forward voltage drop ensures minimal power loss during operation.

Advantages and Disadvantages

Advantages

  • High current capability
  • Low forward voltage drop
  • Reliable performance in electronic circuits

Disadvantages

  • Limited reverse voltage tolerance compared to other diodes
  • Sensitive to temperature variations

Working Principles

The 1N5995B-TP operates based on the principle of unidirectional conduction, allowing current flow in one direction while blocking it in the reverse direction. This characteristic makes it ideal for rectification and voltage regulation in electronic circuits.

Detailed Application Field Plans

The 1N5995B-TP diode finds extensive use in various electronic applications, including: - Power supplies - Voltage regulators - Rectifier circuits - Switching circuits

Detailed and Complete Alternative Models

For applications requiring similar functionality, alternative diode models include: - 1N4001: General-purpose rectifier diode - 1N5408: High-current rectifier diode - 1N5819: Schottky barrier diode

In conclusion, the 1N5995B-TP diode offers high current capability and low forward voltage drop, making it a valuable component in electronic circuits for rectification and voltage regulation.

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Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von 1N5995B-TP in technischen Lösungen auf

  1. What is the 1N5995B-TP diode used for?

    • The 1N5995B-TP diode is commonly used for voltage regulation and transient suppression in various technical solutions.

  2. What are the key specifications of the 1N5995B-TP diode?

    • The 1N5995B-TP diode typically has a peak pulse power of 1500W, a breakdown voltage of 78.3V, and a low clamping voltage.

  3. How does the 1N5995B-TP diode provide transient suppression?

    • The 1N5995B-TP diode suppresses transients by quickly diverting excess voltage away from sensitive components, protecting them from damage.

  4. In what applications is the 1N5995B-TP diode commonly used?

    • The 1N5995B-TP diode is often used in power supplies, automotive electronics, telecommunications equipment, and industrial control systems.

  5. What are the advantages of using the 1N5995B-TP diode in technical solutions?

    • The 1N5995B-TP diode offers high surge capability, fast response time, and reliable overvoltage protection, making it ideal for demanding applications.

  6. Can the 1N5995B-TP diode be used for reverse polarity protection?

    • Yes, the 1N5995B-TP diode can be employed for reverse polarity protection to prevent damage caused by incorrect power supply connections.

  7. What is the temperature range for the 1N5995B-TP diode's operation?

    • The 1N5995B-TP diode typically operates within a temperature range of -55°C to 175°C, allowing for reliable performance in various environments.

  8. How does the 1N5995B-TP diode contribute to ESD protection?

    • The 1N5995B-TP diode helps safeguard electronic circuits from electrostatic discharge (ESD) events by providing a low-impedance path for transient currents.

  9. Are there any specific layout considerations when integrating the 1N5995B-TP diode into a circuit?

    • It is important to minimize the length and impedance of the traces connecting the 1N5995B-TP diode to the protected circuit to ensure optimal performance.

  10. What are some best practices for testing the 1N5995B-TP diode in a technical solution?

    • Testing the 1N5995B-TP diode under simulated transient conditions and verifying its clamping voltage and response time can help ensure its effectiveness in the application.