MX29F200CTTI-70G

Product Overview

Category

The MX29F200CTTI-70G belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and digital cameras.

Characteristics

• Non-volatile memory: The MX29F200CTTI-70G retains stored data even when power is turned off.
• High storage capacity: This flash memory chip has a capacity of 2 megabits (256 kilobytes).
• Fast data access: It offers high-speed read and write operations, allowing for quick retrieval and storage of data.
• Reliable performance: The MX29F200CTTI-70G ensures data integrity and durability through advanced error correction techniques.
• Low power consumption: This flash memory chip is designed to minimize energy usage, making it suitable for battery-powered devices.

Package and Quantity

The MX29F200CTTI-70G is available in a small form factor package known as Thin Small Outline Package (TSOP). It is supplied in tape and reel packaging, with a quantity of 2500 units per reel.

Specifications

• Manufacturer: Macronix International Co., Ltd.
• Part Number: MX29F200CTTI-70G
• Memory Type: NOR Flash
• Memory Capacity: 2 Megabits (256 Kilobytes)
• Operating Voltage: 2.7V - 3.6V
• Access Time: 70 nanoseconds
• Interface: Parallel
• Package Type: TSOP
• Package Dimensions: 8mm x 14mm
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MX29F200CTTI-70G features a parallel interface with a total of 32 pins. The pin configuration is as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. CE# - Chip Enable Input
18. OE# - Output Enable Input
19. WE# - Write Enable Input
20. BYTE# - Byte/Word Selection Input
21. DQ0 - Data Input/Output
22. DQ1 - Data Input/Output
23. DQ2 - Data Input/Output
24. DQ3 - Data Input/Output
25. DQ4 - Data Input/Output
26. DQ5 - Data Input/Output
27. DQ6 - Data Input/Output
28. DQ7 - Data Input/Output
29. VCC - Power Supply
30. GND - Ground
31. RP# - Ready/Busy Output
32. RESET# - Reset Input

Functional Features

The MX29F200CTTI-70G offers the following functional features:

• High-speed read and write operations: Enables fast data access and storage.
• Sector erase capability: Allows for selective erasure of specific memory sectors.
• Block lock protection: Provides security by preventing accidental modification or erasure of protected blocks.
• Automatic sleep mode: Reduces power consumption when the chip is idle.
• Error correction code (ECC): Ensures data integrity by detecting and correcting errors during read operations.

Advantages and Disadvantages

Advantages

• High storage capacity for a wide range of applications.
• Fast data access and retrieval.
• Low power consumption, suitable for battery-powered devices.
• Reliable performance with error correction capabilities.
• Compact package size for space-constrained designs.

Disadvantages

• Limited storage capacity compared to higher-end flash memory chips.
• Parallel interface may not be compatible with all modern devices.
• Higher cost per megabit compared to larger capacity flash memory options.

Working Principles

The MX29F200CTTI-70G utilizes NOR flash memory technology. It stores data by trapping electric charges in floating gate transistors. When reading data, the charge level in each transistor is detected, representing either a "0" or "1" bit. During write operations, the trapped charges are modified to store new data.

Detailed Application Field Plans

The MX29F200CTTI-70G can be used in various applications, including but not limited to:

1. Embedded systems: Provides non-volatile storage for firmware and configuration data.
2. Consumer electronics