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IXGH64N60B3
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IXGH64N60B3

Product Overview

Category

The IXGH64N60B3 belongs to the category of power semiconductor devices.

Use

It is used in high-power applications such as motor drives, inverters, and power supplies.

Characteristics

  • High voltage and current handling capability
  • Low on-state voltage drop
  • Fast switching speed
  • Robust and reliable performance

Package

The IXGH64N60B3 is typically available in a TO-247 package.

Essence

The essence of the IXGH64N60B3 lies in its ability to efficiently control high power levels with minimal losses.

Packaging/Quantity

It is commonly packaged in tubes or trays and is available in varying quantities depending on the supplier.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 64A
  • Package Type: TO-247
  • Switching Speed: <100ns
  • On-State Voltage Drop: <2V

Detailed Pin Configuration

The IXGH64N60B3 typically has three pins: 1. Gate 2. Drain 3. Source

Functional Features

  • High voltage and current handling capacity
  • Fast switching speed for improved efficiency
  • Low on-state voltage drop for reduced power losses
  • Robust construction for reliable operation in demanding environments

Advantages

  • Suitable for high-power applications
  • Efficient and reliable performance
  • Fast switching speed improves system efficiency

Disadvantages

  • May require careful thermal management due to high power dissipation
  • Higher cost compared to lower power devices

Working Principles

The IXGH64N60B3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current through the device. When a suitable gate voltage is applied, the device allows high power levels to be controlled with minimal losses.

Detailed Application Field Plans

The IXGH64N60B3 is well-suited for use in various high-power applications, including: - Motor drives for industrial machinery - Inverters for renewable energy systems - Power supplies for high-power electronic equipment

Detailed and Complete Alternative Models

Some alternative models to the IXGH64N60B3 include: - IRG4PH40UD (International Rectifier) - FGA60N65SMD (Fairchild Semiconductor) - STGW30NC60WD (STMicroelectronics)

In conclusion, the IXGH64N60B3 is a high-performance power semiconductor device designed for demanding high-power applications, offering efficient and reliable operation with fast switching speeds and low on-state voltage drop.

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Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von IXGH64N60B3 in technischen Lösungen auf

  1. What is the maximum voltage rating of IXGH64N60B3?

    • The maximum voltage rating of IXGH64N60B3 is 600V.

  2. What is the continuous current rating of IXGH64N60B3?

    • The continuous current rating of IXGH64N60B3 is 64A.

  3. What type of package does IXGH64N60B3 come in?

    • IXGH64N60B3 comes in a TO-247 package.

  4. What is the typical on-state voltage drop of IXGH64N60B3?

    • The typical on-state voltage drop of IXGH64N60B3 is 1.8V at 32A.

  5. What are the typical applications for IXGH64N60B3?

    • IXGH64N60B3 is commonly used in motor drives, inverters, and power supplies.

  6. What is the maximum junction temperature of IXGH64N60B3?

    • The maximum junction temperature of IXGH64N60B3 is 150°C.

  7. Does IXGH64N60B3 have built-in protection features?

    • IXGH64N60B3 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.

  8. What is the gate threshold voltage of IXGH64N60B3?

    • The gate threshold voltage of IXGH64N60B3 is typically around 4V.

  9. Can IXGH64N60B3 be used in parallel to increase current handling capability?

    • Yes, IXGH64N60B3 can be used in parallel to increase current handling capability in high-power applications.

  10. Is IXGH64N60B3 suitable for high-frequency switching applications?

    • IXGH64N60B3 is not specifically designed for high-frequency switching applications and may exhibit higher switching losses at elevated frequencies.