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IXGH12N120A3
Product Overview
Category
The IXGH12N120A3 belongs to the category of high-power IGBT (Insulated Gate Bipolar Transistor) modules.
Use
It is commonly used in high-power applications such as motor drives, power supplies, and renewable energy systems.
Characteristics
- High current and voltage handling capabilities
- Low on-state voltage drop
- Fast switching speed
- Robust and reliable performance
Package
The IXGH12N120A3 is typically packaged in a module with appropriate thermal management features to handle high power dissipation.
Essence
The essence of the IXGH12N120A3 lies in its ability to efficiently control high power levels while maintaining reliability and robustness.
Packaging/Quantity
It is usually available in single or multiple quantities per package, depending on the supplier.
Specifications
- Maximum Collector-Emitter Voltage: 1200V
- Continuous Collector Current: 40A
- Maximum Power Dissipation: 300W
- Operating Temperature Range: -55°C to 150°C
- Isolation Voltage: 2500Vrms
Detailed Pin Configuration
The IXGH12N120A3 typically has three main terminals: 1. Collector (C) 2. Emitter (E) 3. Gate (G)
Functional Features
- High current and voltage handling capacity
- Fast switching speed for efficient power control
- Low on-state voltage drop for reduced power losses
- Robust construction for reliable operation in demanding environments
Advantages
- Suitable for high-power applications
- Efficient power control and low power losses
- Reliable performance in challenging conditions
Disadvantages
- May require careful thermal management due to high power dissipation
- Higher cost compared to lower power devices
Working Principles
The IXGH12N120A3 operates based on the principles of controlling the flow of current between the collector and emitter terminals using the gate signal. When the gate signal is applied, the device allows current to flow, and when the gate signal is removed, the current flow is interrupted.
Detailed Application Field Plans
The IXGH12N120A3 is well-suited for various high-power applications, including: - Motor drives for industrial machinery - Power supplies for high-power equipment - Renewable energy systems such as wind and solar inverters
Detailed and Complete Alternative Models
Some alternative models to the IXGH12N120A3 include: - IXGH25N120A3 - IXGH30N120A3 - IXGH40N120A3
In conclusion, the IXGH12N120A3 is a high-power IGBT module designed for efficient power control in demanding applications, offering robust performance and reliability.
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Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von IXGH12N120A3 in technischen Lösungen auf
What is the maximum voltage rating of IXGH12N120A3?
- The maximum voltage rating of IXGH12N120A3 is 1200V.
What is the maximum continuous collector current of IXGH12N120A3?
- The maximum continuous collector current of IXGH12N120A3 is 24A.
What type of package does IXGH12N120A3 come in?
- IXGH12N120A3 comes in a TO-247 package.
What is the typical on-state voltage of IXGH12N120A3?
- The typical on-state voltage of IXGH12N120A3 is 2.2V.
What are the typical applications for IXGH12N120A3?
- IXGH12N120A3 is commonly used in motor drives, inverters, and power supplies.
What is the maximum junction temperature of IXGH12N120A3?
- The maximum junction temperature of IXGH12N120A3 is 150°C.
Does IXGH12N120A3 have built-in protection features?
- No, IXGH12N120A3 does not have built-in protection features and may require external circuitry for protection.
What is the gate-emitter threshold voltage of IXGH12N120A3?
- The gate-emitter threshold voltage of IXGH12N120A3 is typically 4V.
Can IXGH12N120A3 be used in high-frequency applications?
- Yes, IXGH12N120A3 can be used in high-frequency applications due to its fast switching characteristics.
Is IXGH12N120A3 RoHS compliant?
- Yes, IXGH12N120A3 is RoHS compliant, making it suitable for environmentally friendly designs.