IXFR80N10Q

Product Overview

Category: Power MOSFET
Use: Power switching applications
Characteristics: High voltage, low on-resistance, fast switching speed
Package: TO-220AB
Essence: N-channel enhancement mode power MOSFET
Packaging/Quantity: Tape and reel, 1000 pieces per reel

Specifications

Voltage Rating: 100V
Current Rating: 80A
On-Resistance: 10mΩ
Gate Threshold Voltage: 2.5V
Maximum Power Dissipation: 300W

Detailed Pin Configuration

The IXFR80N10Q has a standard TO-220AB pin configuration with three pins: gate (G), drain (D), and source (S).

Functional Features

Low on-resistance for minimal power loss
Fast switching speed for efficient operation
High voltage rating for versatile applications

Advantages and Disadvantages

Advantages: - High voltage rating allows for diverse usage - Low on-resistance minimizes power dissipation - Fast switching speed enhances efficiency

Disadvantages: - Higher cost compared to lower-rated MOSFETs - Larger package size may limit use in compact designs

Working Principles

The IXFR80N10Q operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel between the drain and source.

Detailed Application Field Plans

The IXFR80N10Q is suitable for a wide range of power switching applications, including: - Motor control systems - Power supplies - Inverters - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

IXFR60N20Q: Lower voltage and current rating
IXFR100N10Q: Higher voltage rating and lower on-resistance
IXFR80N15Q: Similar voltage and current rating with slightly higher on-resistance

This comprehensive range of alternative models provides flexibility in selecting the most suitable MOSFET for specific application requirements.

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Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von IXFR80N10Q in technischen Lösungen auf

What is IXFR80N10Q?
- IXFR80N10Q is a high-performance power MOSFET designed for various technical applications requiring efficient power management.
What are the key features of IXFR80N10Q?
- The key features of IXFR80N10Q include low on-resistance, high current capability, and fast switching speed, making it suitable for power electronics applications.
What are the typical applications of IXFR80N10Q?
- IXFR80N10Q is commonly used in applications such as motor control, power supplies, inverters, and other power management systems.
What is the maximum voltage and current rating for IXFR80N10Q?
- The maximum voltage rating for IXFR80N10Q is typically around 100V, and the current rating can be up to 80A, making it suitable for high-power applications.
How does IXFR80N10Q compare to other similar MOSFETs in the market?
- IXFR80N10Q offers a good balance of performance, cost, and reliability compared to other MOSFETs, making it a popular choice for many technical solutions.
What are the thermal characteristics of IXFR80N10Q?
- IXFR80N10Q has low thermal resistance and is designed to efficiently dissipate heat, ensuring reliable operation in high-power applications.
Can IXFR80N10Q be used in automotive applications?
- Yes, IXFR80N10Q is suitable for automotive applications where high power handling and efficiency are required.
Are there any specific considerations for driving IXFR80N10Q in a circuit?
- It is important to ensure proper gate drive voltage and current to fully utilize the performance of IXFR80N10Q and prevent damage due to improper driving.
What are the recommended PCB layout guidelines for using IXFR80N10Q?
- Proper PCB layout techniques, including minimizing parasitic inductance and optimizing thermal management, should be followed to maximize the performance and reliability of IXFR80N10Q.
Where can I find detailed technical specifications and application notes for IXFR80N10Q?
- Detailed technical specifications and application notes for IXFR80N10Q can be found on the manufacturer's website or datasheet, providing comprehensive information for designing technical solutions.