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IXFK21N100Q
Product Overview
Category
The IXFK21N100Q belongs to the category of power MOSFETs.
Use
It is used for high-voltage, high-speed switching applications in various electronic circuits and systems.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
- Avalanche energy specified
- RoHS compliant
Package
The IXFK21N100Q is typically available in a TO-264 package.
Essence
The essence of the IXFK21N100Q lies in its ability to efficiently handle high voltages and fast switching requirements in electronic applications.
Packaging/Quantity
It is commonly packaged in tubes or reels and is available in varying quantities based on customer requirements.
Specifications
- Drain-Source Voltage (VDS): 1000V
- Continuous Drain Current (ID): 21A
- RDS(ON) Max @ VGS = 10V: 0.21Ω
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 60nC
- Avalanche Energy (EA): 300mJ
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The detailed pin configuration of the IXFK21N100Q includes the following pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in high-power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid response in switching circuits.
Advantages
- Suitable for high-voltage applications
- Low power dissipation
- Fast switching characteristics
Disadvantages
- May require additional circuitry for driving the gate due to high gate-source voltage rating
Working Principles
The IXFK21N100Q operates based on the principles of field-effect transistors, utilizing the control of voltage on the gate terminal to modulate the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IXFK21N100Q is commonly used in the following application fields: - Switched-mode power supplies - Motor control - Inverters - Solar inverters - Induction heating
Detailed and Complete Alternative Models
Some alternative models to the IXFK21N100Q include: - IXFK44N50P - IXFK90N25X2
In conclusion, the IXFK21N100Q power MOSFET offers high-voltage capability, low on-resistance, and fast switching speed, making it suitable for various high-power electronic applications.
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Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von IXFK21N100Q in technischen Lösungen auf
What is the maximum voltage rating of IXFK21N100Q?
- The maximum voltage rating of IXFK21N100Q is 1000V.
What is the continuous drain current of IXFK21N100Q?
- The continuous drain current of IXFK21N100Q is typically 21A.
What type of package does IXFK21N100Q come in?
- IXFK21N100Q comes in a TO-264 package.
What are the typical applications for IXFK21N100Q?
- IXFK21N100Q is commonly used in power supplies, motor drives, and inverters.
What is the on-state resistance of IXFK21N100Q?
- The on-state resistance of IXFK21N100Q is typically 0.14 ohms.
Is IXFK21N100Q suitable for high-frequency switching applications?
- Yes, IXFK21N100Q is suitable for high-frequency switching due to its low on-state resistance.
Does IXFK21N100Q have built-in protection features?
- IXFK21N100Q does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What is the operating temperature range of IXFK21N100Q?
- The operating temperature range of IXFK21N100Q is typically -55°C to 150°C.
Can IXFK21N100Q be used in automotive applications?
- Yes, IXFK21N100Q can be used in automotive applications such as electric vehicle powertrains and battery management systems.
Are there any recommended alternative components to IXFK21N100Q?
- Some recommended alternative components to IXFK21N100Q include IRF1405, IRFP460, and IRFB4110.