ISSI, Integrated Silicon Solution Inc
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IS66WV51216EBLL-70BLI-TR
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IS66WV51216EBLL-70BLI-TR

Product Overview

Category

IS66WV51216EBLL-70BLI-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

  • High-speed operation
  • Large storage capacity
  • Low power consumption
  • Compact package size
  • Reliable performance

Package

IS66WV51216EBLL-70BLI-TR is available in a small outline, thin profile (TSOP) package. This package ensures easy integration into various electronic devices.

Essence

The essence of IS66WV51216EBLL-70BLI-TR lies in its ability to provide fast and reliable data storage, enabling efficient functioning of electronic devices.

Packaging/Quantity

IS66WV51216EBLL-70BLI-TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

  • Memory Type: Synchronous DRAM (SDRAM)
  • Capacity: 512 megabits (64 megabytes)
  • Operating Voltage: 3.3 volts
  • Speed Grade: 70 ns
  • Interface: Parallel
  • Organization: 16M words x 16 bits
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS66WV51216EBLL-70BLI-TR is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. WE#
  12. CAS#
  13. RAS#
  14. A0
  15. A1
  16. A2
  17. A3
  18. A4
  19. A5
  20. A6
  21. A7
  22. A8
  23. A9
  24. A10
  25. A11
  26. A12
  27. A13
  28. A14
  29. A15
  30. A16
  31. A17
  32. A18
  33. A19
  34. A20
  35. A21
  36. A22
  37. A23
  38. A24
  39. A25
  40. A26
  41. A27
  42. A28
  43. A29
  44. A30
  45. A31
  46. NC
  47. CLK
  48. CKE
  49. CS#
  50. DQM0
  51. DQM1
  52. DQS0
  53. DQS1
  54. DM0
  55. DM1
  56. VDDQ
  57. VSSQ

Functional Features

  • Synchronous operation for high-speed data transfer
  • Burst mode for efficient data access
  • Auto-refresh and self-refresh modes for power-saving
  • On-die termination (ODT) for improved signal integrity
  • Programmable burst length and latency settings for flexibility

Advantages and Disadvantages

Advantages

  • High-speed operation enhances overall system performance
  • Large storage capacity accommodates extensive data requirements
  • Low power consumption prolongs battery life in portable devices
  • Compact package size allows for space-efficient integration
  • Reliable performance ensures data integrity and system stability

Disadvantages

  • May be relatively expensive compared to other memory options
  • Limited compatibility with certain older systems or devices

Working Principles

IS66WV51216EBLL-70BLI-TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores and retrieves data by synchronizing with the system clock, allowing for faster and more efficient data transfer.

Detailed Application Field Plans

IS66WV51216EBLL-70BLI-TR finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Smartphones and tablets - Gaming consoles - Automotive electronics - Industrial control systems - Medical equipment

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS66WV51216EBLL-70BLI-TR include: - MT48LC32M16A2P-75: Micron Technology Inc. - K4S561632E-UC60: Samsung Electronics Co., Ltd. - HYB25D256800TTL-7: Infineon Technologies AG - AS4C32M16SB-7TCN:

Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von IS66WV51216EBLL-70BLI-TR in technischen Lösungen auf

Sure! Here are 10 common questions and answers related to the application of IS66WV51216EBLL-70BLI-TR in technical solutions:

  1. Question: What is the maximum operating frequency of IS66WV51216EBLL-70BLI-TR?
    Answer: The maximum operating frequency of IS66WV51216EBLL-70BLI-TR is 70 MHz.

  2. Question: What is the capacity of IS66WV51216EBLL-70BLI-TR?
    Answer: IS66WV51216EBLL-70BLI-TR has a capacity of 512 megabits (64 megabytes).

  3. Question: What is the voltage supply range for IS66WV51216EBLL-70BLI-TR?
    Answer: The voltage supply range for IS66WV51216EBLL-70BLI-TR is 2.7V to 3.6V.

  4. Question: Does IS66WV51216EBLL-70BLI-TR support multiple banks?
    Answer: Yes, IS66WV51216EBLL-70BLI-TR supports four banks.

  5. Question: What is the access time of IS66WV51216EBLL-70BLI-TR?
    Answer: The access time of IS66WV51216EBLL-70BLI-TR is 70 ns.

  6. Question: Can IS66WV51216EBLL-70BLI-TR be used in industrial temperature environments?
    Answer: Yes, IS66WV51216EBLL-70BLI-TR is designed to operate in industrial temperature ranges (-40°C to +85°C).

  7. Question: Does IS66WV51216EBLL-70BLI-TR support burst mode?
    Answer: Yes, IS66WV51216EBLL-70BLI-TR supports both sequential and interleave burst modes.

  8. Question: What is the package type of IS66WV51216EBLL-70BLI-TR?
    Answer: IS66WV51216EBLL-70BLI-TR comes in a 48-ball FBGA (Fine-Pitch Ball Grid Array) package.

  9. Question: Can IS66WV51216EBLL-70BLI-TR be used in battery-powered devices?
    Answer: Yes, IS66WV51216EBLL-70BLI-TR has low power consumption and can be used in battery-powered devices.

  10. Question: Is IS66WV51216EBLL-70BLI-TR compatible with other memory interfaces?
    Answer: Yes, IS66WV51216EBLL-70BLI-TR is compatible with various industry-standard memory interfaces like asynchronous SRAM and FPM DRAM.

Please note that these answers are based on general information about IS66WV51216EBLL-70BLI-TR and may vary depending on specific application requirements.