IS63WV1288DBLL-10HLI-TR

Product Overview

Category

IS63WV1288DBLL-10HLI-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Non-volatile memory
• Low power consumption
• Compact package size
• Wide temperature range

Package

IS63WV1288DBLL-10HLI-TR is available in a small outline package (SOP) format.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and quickly.

Packaging/Quantity

IS63WV1288DBLL-10HLI-TR is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 128 Megabits (16 Megabytes)
• Organization: 8M words x 16 bits
• Access Time: 10 nanoseconds
• Supply Voltage: 3.3 volts
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. Vcc (Power supply)
2. GND (Ground)
3. A0-A22 (Address inputs)
4. DQ0-DQ15 (Data inputs/outputs)
5. WE# (Write Enable)
6. OE# (Output Enable)
7. CE# (Chip Enable)
8. UB/LB# (Upper Byte/Lower Byte control)
9. NC (No Connection)

Functional Features

• High-speed random access
• Low power consumption in standby mode
• Easy interfacing with other components
• Multiple chip enable options for flexible memory organization
• Byte control for efficient data transfer

Advantages and Disadvantages

Advantages

• Fast access time allows for quick data retrieval
• Non-volatile memory retains data even when power is lost
• Low power consumption extends battery life in portable devices
• Compact package size saves board space
• Wide temperature range enables operation in various environments

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited storage capacity compared to other memory types
• Susceptible to data loss in case of physical damage or electrical failure

Working Principles

IS63WV1288DBLL-10HLI-TR utilizes static random access memory technology. It stores data using a network of flip-flops, which retain information as long as power is supplied. The memory cells are organized in a matrix, with each cell representing a bit of data. Accessing the memory involves providing the appropriate address and control signals to read from or write to specific memory locations.

Detailed Application Field Plans

IS63WV1288DBLL-10HLI-TR finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers and data centers - Mobile phones and tablets - Automotive electronics - Industrial control systems - Medical equipment - Consumer electronics

Detailed and Complete Alternative Models

1. IS61LV25616AL-10TLI: 256 Megabit (32 Megabyte) SRAM, 16M words x 16 bits, 10 ns access time.
2. IS62WV51216BLL-55TLI: 512 Megabit (64 Megabyte) SRAM, 32M words x 16 bits, 55 ns access time.
3. IS64WV102416BLL-10TLI: 1 Gigabit (128 Megabyte) SRAM, 64M words x 16 bits, 10 ns access time.

These alternative models offer different capacities and access times to suit specific application requirements.

In conclusion, IS63WV1288DBLL-10HLI-TR is a high-speed, non-volatile semiconductor memory device primarily used for data storage in various electronic devices. Its compact package size, low power consumption, and wide temperature range make it suitable for diverse applications. While it offers advantages such as fast access time and non-volatility, it also has limitations in terms of cost and storage capacity. Understanding its pin configuration, functional features, working principles, and alternative models provides a comprehensive understanding of this product's capabilities and potential applications.