IS61NVF102418-6.5B3I-TR

Product Overview

Category

IS61NVF102418-6.5B3I-TR belongs to the category of non-volatile memory products.

Use

This product is primarily used for storing and retrieving data in electronic devices.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The product offers a large storage capacity.
• Fast access time: Data can be read from and written to the memory quickly.
• Low power consumption: The product is designed to minimize power usage.
• Compact package: The product comes in a small form factor, suitable for integration into various devices.

Package

IS61NVF102418-6.5B3I-TR is typically packaged in a compact and durable casing, ensuring protection against external factors such as moisture and physical damage.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic devices, enabling efficient data management and retrieval.

Packaging/Quantity

IS61NVF102418-6.5B3I-TR is commonly available in reels or trays, with varying quantities depending on the manufacturer's specifications.

Specifications

• Model: IS61NVF102418-6.5B3I-TR
• Memory Type: Non-volatile Flash Memory
• Capacity: 1 gigabit (128 megabytes)
• Access Time: 65 nanoseconds
• Operating Voltage: 2.7V - 3.6V
• Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The pin configuration of IS61NVF102418-6.5B3I-TR is as follows:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ15 - Data input/output lines
4. WE# - Write enable control
5. CE# - Chip enable control
6. OE# - Output enable control
7. WP# - Write protect control
8. RY/BY# - Ready/busy status output

Functional Features

• High-speed read and write operations
• Low power consumption during standby mode
• Automatic sleep mode for further power savings
• Hardware and software write protection options
• Erase and program suspend/resume functions
• Internal error correction code (ECC) for data integrity

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even without power
• Fast access time allows for quick data retrieval
• Compact package enables integration into various devices
• Low power consumption prolongs battery life in portable devices
• Error correction code enhances data reliability

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit compared to some alternatives
• Susceptible to physical damage if mishandled

Working Principles

IS61NVF102418-6.5B3I-TR utilizes flash memory technology, which stores data by trapping electric charges within floating gate transistors. These charges represent binary information that can be read or modified through electrical signals. The memory cells are organized in a grid-like structure, with each cell storing multiple bits of data. When reading or writing data, the appropriate electrical signals are applied to the memory's address and control pins, enabling the desired operation.

Detailed Application Field Plans

IS61NVF102418-6.5B3I-TR finds applications in various electronic devices, including but not limited to: - Mobile phones - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. IS61LV25616AL-10TLI: 256 kilobit low-voltage CMOS static RAM
2. IS62WV51216BLL-55BLI: 512 kilobit asynchronous SRAM
3. IS64WV12816BLL-15BLI: 128 kilobit synchronous burst SRAM
4. IS66WV51216EBLL-70BLI: 512 kilobit synchronous burst SRAM with EEPROM

These alternative models offer different capacities, access times, and interface options to cater to specific application requirements.

In conclusion, IS61NVF102418-6.5B3I-TR is a non-volatile memory product that provides reliable data storage for electronic devices. Its high capacity, fast access time, and low power consumption make it suitable for various applications. However, it has limitations in terms of storage capacity and cost compared to other alternatives. Understanding its working principles and considering alternative models can