IS43R16160F-6BLI

Product Overview

Category

IS43R16160F-6BLI belongs to the category of semiconductor memory products.

Use

This product is primarily used as a random access memory (RAM) in various electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size
• Reliable performance

Package

IS43R16160F-6BLI is available in a small outline integrated circuit (SOIC) package. The package provides protection and easy integration into electronic devices.

Essence

The essence of IS43R16160F-6BLI lies in its ability to store and retrieve data quickly and efficiently, enhancing the overall performance of electronic devices.

Packaging/Quantity

IS43R16160F-6BLI is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Organization: 16M words x 16 bits
• Operating Voltage: 3.3V
• Clock Frequency: 166MHz
• Access Time: 6ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

IS43R16160F-6BLI has a total of 48 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. NC
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS
40. /CKE
41. /CLK
42. /DQM0
43. /DQM1
44. VDD
45. VSS
46. VSS
47. VSS
48. VDD

Functional Features

• Burst mode operation for high-speed data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization
• Internal banks for simultaneous access to multiple memory locations

Advantages and Disadvantages

Advantages

• High-speed operation enhances overall system performance
• Low power consumption prolongs battery life in portable devices
• Large storage capacity accommodates complex applications
• Compact package size allows for space-efficient integration
• Reliable performance ensures data integrity

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond a certain storage capacity
• Susceptible to data loss in case of power failure without proper backup mechanisms

Working Principles

IS43R16160F-6BLI operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed and manipulated by sending control signals through the pins, enabling read and write operations.

Detailed Application Field Plans

IS43R16160F-6BLI finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles - Networking equipment - Automotive electronics - Industrial automation systems

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to IS43R16160F-6BLI are: - IS43TR16128B-15HBLI - MT48LC16M16A2P-75IT - K4S561632E-UC75

These models offer similar functionality and specifications, providing options for different design requirements and compatibility with existing systems.

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