IS42S16160D-75EBL-TR

Product Overview

Category

IS42S16160D-75EBL-TR belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is commonly used in electronic devices such as computers, laptops, and mobile phones for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact package size
• Wide operating temperature range
• Reliable performance

Package

IS42S16160D-75EBL-TR is typically packaged in a small outline dual in-line memory module (SODIMM) format.

Essence

The essence of IS42S16160D-75EBL-TR lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

IS42S16160D-75EBL-TR is usually sold in bulk packaging, with quantities varying based on customer requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 16 Megabits (2 Megabytes)
• Organization: 1M x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: 75ns
• Interface: Parallel
• Pin Count: 54 pins
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /CKE
42. /CLK
43. /BA0
44. /BA1
45. /A16
46. /A17
47. VSS
48. VSS
49. VSS
50. VDDQ
51. VDDQ
52. VDDQ
53. VDD
54. VDD

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization

Advantages and Disadvantages

Advantages

• Fast data storage and retrieval
• Low power consumption
• Compact size
• Wide operating temperature range
• Reliable performance

Disadvantages

• Limited capacity compared to other memory types
• Higher cost per unit compared to some alternatives

Working Principles

IS42S16160D-75EBL-TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed by sending commands and addresses to the memory module, which activates the appropriate row and column to read or write data.

Detailed Application Field Plans

IS42S16160D-75EBL-TR finds applications in various electronic devices, including: - Personal computers - Laptops - Mobile phones - Tablets - Networking equipment - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to IS42S16160D-75EBL-TR include: - MT48LC16M16A2P-75: 16 Megabit SDRAM, 1M x 16 bits, 3.3V, 75ns - K4S561632H-UC75: 16 Megabit SDRAM, 1M x 16 bits, 3.3V, 75ns - HYB39S16160T-7: 16 Megabit SDRAM, 1M x 16 bits, 3.3V, 7ns

These alternatives offer similar specifications and functionality, providing options for different design requirements.

In conclusion, IS42S16160D