IS42S16160D-6BLI-TR

Product Overview

Category

IS42S16160D-6BLI-TR belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data transfer capabilities
• Low power consumption
• Compact size
• Reliable performance

Package

IS42S16160D-6BLI-TR is available in a small outline, dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S16160D-6BLI-TR lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

This product is typically packaged in trays or reels and is available in various quantities depending on customer requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 16 Megabits (2 Megabytes)
• Organization: 1M x 16 bits
• Speed: 6 nanoseconds (ns)
• Voltage: 3.3 volts (V)
• Interface: Parallel
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S16160D-6BLI-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. WE#
12. CAS#
13. RAS#
14. A0
15. A1
16. A2
17. A3
18. A4
19. A5
20. A6
21. A7
22. A8
23. A9
24. A10
25. A11
26. A12
27. A13
28. A14
29. A15
30. VSS
31. CLK
32. CKE
33. CS#
34. DQM0
35. DQM1
36. BA0
37. BA1
38. VDDQ

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings

Advantages and Disadvantages

Advantages

• Fast data transfer speed enhances overall system performance.
• Low power consumption helps prolong battery life in portable devices.
• Compact size allows for easy integration into various electronic devices.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Higher cost per unit compared to some alternative memory options.
• Sensitivity to electrical noise may require additional shielding or filtering measures.

Working Principles

IS42S16160D-6BLI-TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed by sending row and column addresses to select the desired memory location. The synchronous nature of SDRAM ensures that data transfers occur in synchronization with the system clock, enabling high-speed operation.

Detailed Application Field Plans

IS42S16160D-6BLI-TR finds applications in a wide range of electronic devices, including: - Personal computers - Laptops - Servers - Workstations - Mobile phones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models to IS42S16160D-6BLI-TR include: - MT48LC16M16A2P-75: Micron Technology Inc. - K4S561632H-UC75: Samsung Electronics Co., Ltd. - HYB39S256160FE-7: Infineon Technologies AG - M5M5256DFP-70LL: Renesas Electronics Corporation

These alternative models offer similar functionality and can be used as substitutes depending on specific requirements.

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