SSCSNBN060PD2A3

Product Overview

Category: Integrated Circuit
Use: Power Management
Characteristics: High efficiency, low power consumption
Package: D2PAK-3
Essence: Power MOSFET
Packaging/Quantity: Tape & Reel / 250 units per reel

Specifications

• Voltage - Drain-Source Breakdown (Min): 60V
• Current - Continuous Drain (Id) @ 25°C: 100A
• Rds On (Max) @ Id, Vgs: 6.0 mOhm @ 50A, 10V
• Input Capacitance (Ciss) @ Vds: 5200pF @ 25V
• Power Dissipation (Max): 200W

Detailed Pin Configuration

1. Gate
2. Drain
3. Source

Functional Features

• Low on-resistance
• Fast switching speed
• High power density

Advantages and Disadvantages

Advantages: - High efficiency - Low power consumption - Compact size

Disadvantages: - Sensitive to voltage spikes - Higher cost compared to traditional MOSFETs

Working Principles

The SSCSNBN060PD2A3 operates by controlling the flow of current between the drain and source terminals using the gate voltage. When a suitable voltage is applied to the gate, the MOSFET allows current to flow through, enabling efficient power management.

Detailed Application Field Plans

The SSCSNBN060PD2A3 is ideal for use in various power management applications, including: - Switching power supplies - Motor control - Battery management systems - LED lighting

Detailed and Complete Alternative Models

1. SSCSNBN040PD2A3

   • Voltage - Drain-Source Breakdown (Min): 40V
   • Current - Continuous Drain (Id) @ 25°C: 100A
   • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 50A, 10V
   • Package: D2PAK-3

2. SSCSNBN080PD2A3

   • Voltage - Drain-Source Breakdown (Min): 80V
   • Current - Continuous Drain (Id) @ 25°C: 100A
   • Rds On (Max) @ Id, Vgs: 8.0 mOhm @ 50A, 10V
   • Package: D2PAK-3

3. SSCSNBN100PD2A3

   • Voltage - Drain-Source Breakdown (Min): 100V
   • Current - Continuous Drain (Id) @ 25°C: 100A
   • Rds On (Max) @ Id, Vgs: 10.0 mOhm @ 50A, 10V
   • Package: D2PAK-3

This completes the entry for SSCSNBN060PD2A3, providing comprehensive information about its category, use, characteristics, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.