Category: RF Transistor
Use: Amplification of radio frequency signals
Characteristics: High gain, low noise figure, small package size
Package: SOT-343
Essence: High-frequency transistor for amplifying RF signals
Packaging/Quantity: Tape and reel
The ATF-33143-TR2G has a 4-pin configuration with the following pinout: 1. Source (S) 2. Gate (G) 3. Drain (D) 4. Not connected (NC)
Advantages: - Wide frequency range - Low power consumption - Small form factor
Disadvantages: - Limited maximum power handling capability - Sensitive to electrostatic discharge
The ATF-33143-TR2G operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the source and drain terminals. This allows for amplification of RF signals with minimal added noise.
The ATF-33143-TR2G is suitable for various applications including: - Cellular base stations - Wi-Fi routers - Satellite communication systems - Radar systems - Test and measurement equipment
This completes the entry for ATF-33143-TR2G in the English editing encyclopedia format.
What is ATF-33143-TR2G?
What are the typical applications of ATF-33143-TR2G?
What is the operating frequency range of ATF-33143-TR2G?
What is the typical gain of ATF-33143-TR2G?
What is the noise figure of ATF-33143-TR2G?
What is the recommended bias voltage for ATF-33143-TR2G?
What are the key features of ATF-33143-TR2G?
What are the thermal characteristics of ATF-33143-TR2G?
What are the storage and operating temperature ranges for ATF-33143-TR2G?
Is ATF-33143-TR2G RoHS compliant?