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BLF7G27L-75P,112
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BLF7G27L-75P,112

Product Overview

Category: RF Power Transistor
Use: Amplification of radio frequency signals
Characteristics: High power, high efficiency, compact size
Package: SOT539A
Essence: Gallium Nitride (GaN) technology
Packaging/Quantity: Tape and reel, 800 units per reel

Specifications

  • Frequency Range: 0.03 - 2.7 GHz
  • Output Power: 75 W
  • Efficiency: >60%
  • Gain: 17 dB
  • Voltage: 32 V
  • Current: 15 A
  • Operating Temperature: -40°C to +150°C

Detailed Pin Configuration

  1. Gate
  2. Drain
  3. Source
  4. Ground
  5. Not connected
  6. Thermal pad

Functional Features

  • High linearity
  • Broadband performance
  • Excellent thermal stability
  • Integrated ESD protection

Advantages and Disadvantages

Advantages: - High power output - Wide frequency range - Compact package size - Enhanced reliability

Disadvantages: - Higher cost compared to some alternative technologies - Sensitive to electrostatic discharge (ESD)

Working Principles

The BLF7G27L-75P,112 utilizes GaN technology to amplify RF signals. When a signal is applied to the gate terminal, the transistor allows a larger current to flow from the drain to the source, effectively amplifying the input signal.

Detailed Application Field Plans

  1. Telecommunications: Used in base stations for cellular networks.
  2. Radar Systems: Employed in radar transmitters for military and civilian applications.
  3. Broadcasting: Utilized in high-power broadcast transmitters for radio and television.

Detailed and Complete Alternative Models

  1. BLF888A-75,112
  2. BLF184XR,112
  3. BLF578XR,112
  4. BLF178XR,112

This concludes the entry for BLF7G27L-75P,112, covering its product details, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Listen Sie 10 häufige Fragen und Antworten im Zusammenhang mit der Anwendung von BLF7G27L-75P,112 in technischen Lösungen auf

  1. What is the operating frequency of BLF7G27L-75P,112?

    • The operating frequency of BLF7G27L-75P,112 is in the X-band, typically around 7.2 to 7.7 GHz.

  2. What is the typical output power of BLF7G27L-75P,112?

    • The typical output power of BLF7G27L-75P,112 is around 75 watts.

  3. What are the key features of BLF7G27L-75P,112?

    • BLF7G27L-75P,112 is a high-power transistor designed for use in radar and communication applications. It offers high efficiency and ruggedness.

  4. What are the recommended operating conditions for BLF7G27L-75P,112?

    • BLF7G27L-75P,112 operates under typical voltage and current conditions of 32V and 3.5A, respectively.

  5. What are the thermal characteristics of BLF7G27L-75P,112?

    • BLF7G27L-75P,112 has a thermal resistance of approximately 0.6°C/W, allowing for efficient heat dissipation.

  6. What are the typical applications for BLF7G27L-75P,112?

    • BLF7G27L-75P,112 is commonly used in radar systems, weather monitoring equipment, and satellite communication systems.

  7. What are the recommended matching networks for BLF7G27L-75P,112?

    • To optimize performance, it is recommended to use impedance matching networks designed for the specific operating frequency and power level of BLF7G27L-75P,112.

  8. What are the reliability specifications of BLF7G27L-75P,112?

    • BLF7G27L-75P,112 is designed for high reliability with a mean time between failures (MTBF) exceeding 100,000 hours under normal operating conditions.

  9. What are the packaging options available for BLF7G27L-75P,112?

    • BLF7G27L-75P,112 is available in a bolt-down flange package, providing easy integration into various system designs.

  10. What are the environmental considerations for using BLF7G27L-75P,112?

    • BLF7G27L-75P,112 is designed to operate within specified temperature and humidity ranges, making it suitable for both indoor and outdoor applications.