AS4C256M16D3-12BIN

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory module
• Characteristics:
  • High-speed performance
  • Large storage capacity
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Bulk packaging, typically sold in reels or trays

Specifications

• Part Number: AS4C256M16D3-12BIN
• Organization: 256 Megabit x 16
• Speed: 1200 MHz
• Voltage: 1.5V
• Operating Temperature Range: -40°C to +85°C
• Data Rate: DDR3
• Burst Length: 8
• Refresh: Auto-refresh and self-refresh modes supported
• Pin Count: 96-ball BGA package

Detailed Pin Configuration

The AS4C256M16D3-12BIN has a total of 96 pins arranged in a ball grid array configuration. The pinout is as follows:

```

Pin Name Description

1 VDD Power supply 2 VDDQ Power supply for I/O buffers 3 DQ0 Data input/output bit 0 4 DQ1 Data input/output bit 1 ... ... ... 95 VSS Ground 96 VSSQ Ground for I/O buffers ```

Please refer to the datasheet for the complete pin configuration.

Functional Features

• High-speed operation allows for fast data access and transfer.
• Large storage capacity enables the storage of a significant amount of data.
• Low power consumption helps conserve energy and prolong battery life in portable devices.
• Auto-refresh and self-refresh modes ensure data integrity and reliability.

Advantages

• Fast data access and transfer speeds enhance overall system performance.
• Large storage capacity accommodates the increasing demand for data-intensive applications.
• Low power consumption reduces energy costs and extends battery life.
• Auto-refresh and self-refresh modes ensure data integrity, minimizing the risk of data loss.

Disadvantages

• Higher cost compared to other memory technologies like NAND flash.
• Limited endurance due to the nature of DRAM technology, requiring periodic refresh cycles.

Working Principles

The AS4C256M16D3-12BIN is based on Dynamic Random Access Memory (DRAM) technology. It stores data in capacitors within each memory cell, which must be periodically refreshed to maintain data integrity. The memory cells are organized in a matrix, allowing for efficient read and write operations.

Detailed Application Field Plans

The AS4C256M16D3-12BIN is commonly used in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Consumer electronics (e.g., smartphones, tablets)

Detailed and Complete Alternative Models

• AS4C256M16D3A-12BIN
• MT41K256M16TW-107:P
• K4B2G1646E-BCK0

These alternative models offer similar specifications and functionality to the AS4C256M16D3-12BIN and can be considered as alternatives depending on specific requirements.

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