AS4C16M32MSA-6BINTR

Product Overview

Category

AS4C16M32MSA-6BINTR belongs to the category of semiconductor memory products.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Reliable performance
• Compact package size

Package

AS4C16M32MSA-6BINTR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of AS4C16M32MSA-6BINTR lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

AS4C16M32MSA-6BINTR is typically packaged in trays or reels, with each containing a specific quantity of memory modules. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Part Number: AS4C16M32MSA-6BINTR
• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 16M words x 32 bits
• Operating Voltage: 3.3V
• Speed Grade: 6
• Refresh Mode: Auto-refresh and self-refresh
• Interface: Parallel
• Clock Frequency: 166 MHz
• Access Time: 6 ns
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of AS4C16M32MSA-6BINTR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. DQM0
21. DQM1
22. CAS
23. RAS
24. WE
25. CKE
26. BA0
27. BA1
28. A0
29. A1
30. A2
31. A3
32. A4
33. A5
34. A6
35. A7
36. A8
37. A9
38. A10
39. A11
40. VSS

Functional Features

• High-speed data transfer
• Burst mode operation
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency
• Auto precharge and power-down modes for power savings
• Error correction code (ECC) support for data integrity

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Reliable performance
• Compact form factor

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond a certain capacity

Working Principles

AS4C16M32MSA-6BINTR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores digital information in an array of capacitors, with each capacitor representing a bit of data. The stored information is accessed by sending specific commands and addresses to the memory module, which then retrieves the corresponding data.

Detailed Application Field Plans

AS4C16M32MSA-6BINTR finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers - Workstations - Networking equipment - Industrial automation systems - Medical devices - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to AS4C16M32MSA-6BINTR include: - AS4C16M32MD1-5BINTR - AS4C16M32MD2-6BINTR - AS4C16M32MD3-7BINTR - AS4C16M32MD4-8BINTR - AS4C16M32MD5-9BINTR

These alternative models offer similar functionality and specifications but may differ in terms of speed grade, organization, or package type.

In conclusion, AS4C16M32MSA-6BINTR is a high-performance synchronous DRAM module with a large storage capacity. It offers fast data access, low power consumption, and reliable performance. It finds applications in various electronic devices and systems across different industries.